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Title: High resistivity iron-based, thermally stable magnetic material for on-chip integrated inductors

Patent ·
OSTI ID:1840399
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An on-chip magnetic structure includes a palladium activated seed layer and a substantially amorphous magnetic material disposed onto the palladium activated seed layer. The substantially amorphous magnetic material includes nickel in a range from about 50 to about 80 atomic % (at. %) based on the total number of atoms of the magnetic material, iron in a range from about 10 to about 50 at. % based on the total number of atoms of the magnetic material, and phosphorous in a range from about 0.1 to about 30 at. % based on the total number of atoms of the magnetic material. The magnetic material can include boron in a range from about 0.1 to about 5 at. % based on the total number of atoms of the magnetic material.

Research Organization:
International Business Machines Corp., Armonk, NY (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
B601996
Assignee:
International Business Machines Corporation (Armonk, NY)
Patent Number(s):
11,107,878
Application Number:
14/666,612
OSTI ID:
1840399
Resource Relation:
Patent File Date: 03/24/2015
Country of Publication:
United States
Language:
English

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High resistivity iron-based, thermally stable magnetic material for on-chip integrated inductors patent March 2017
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