The amorphization of 3C-SiC irradiated at moderately elevated temperatures as revealed by X-ray diffraction

Boulle, A.; Debelle, A.; Wallace, J. B.; Bayu Aji, L. B.; Kucheyev, S. O.

doi:10.1016/j.actamat.2017.08.030

Title: The amorphization of 3C-SiC irradiated at moderately elevated temperatures as revealed by X-ray diffraction

Journal Article · Tue Sep 19 00:00:00 EDT 2017 · Acta Materialia

DOI:https://doi.org/10.1016/j.actamat.2017.08.030· OSTI ID:1840129

Boulle, A. ^[1]; Debelle, A. ^[2]; Wallace, J. B. ^[3]; Bayu Aji, L. B. ^[4]; Kucheyev, S. O. ^[4]

Centre Européen de la Céramique, Limoges (France). Science des Procédés Céramiques et Traitements de Surface, CNRS UMR
Univ. Paris-Sud, Orsay (France). Centre de Sciences Nucleaires et de Sciences de la Matiere (CSNSM); Université Paris-Saclay, Orsay (France)
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Texas A & M Univ., College Station, TX (United States)
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)

Mechanisms of radiation damage buildup in 3C-SiC remain poorly understood. Here, we use X-ray diffraction in combination with numerical simulations to study depth profiles of radiation-produced strain and lattice damage in 3C-SiC bombarded in the temperature range of 25–200 °C with 500 keV Ar ions. Results reveal increased defect recombination with increasing temperature, with a critical amorphization fluence increasing from 0.17 to 0.44 displacements per atom. The amorphization process is found to be correlated with the evolution of lattice strain. We find that, at fluences corresponding to the onset of amorphization, lattice strain is ~2% and is independent of temperature. With continuing bombardment above the onset of amorphization, the strain in the crystal bulk increases and reaches a saturation value that decreases from 7% to 5% with increasing temperature. Based on strain profiles, we compute depth profiles of the effective concentration of point defect clusters in the crystalline phase. Bombardment at higher temperatures results in lower maximum defect concentrations pointing to enhanced defect mobility.

View Accepted Manuscript (DOE)

View Accepted Manuscript (Publisher)

Cite

Export

Save

Research Organization:: Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA)

Grant/Contract Number:: AC52-07NA27344

OSTI ID:: 1840129

Alternate ID(s):: OSTI ID: 1549746

Report Number(s):: LLNL-JRNL-779360; 973036

Journal Information:: Acta Materialia, Vol. 140; ISSN 1359-6454

Publisher:: ElsevierCopyright Statement

Country of Publication:: United States

Language:: English

Citation Metrics:

Cited by: 24 works

Citation information provided by
Web of Science

References (41)

Ion implantation effects in silicon carbide McHargue, Carl J.; Williams, J. M. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 80-81 https://doi.org/10.1016/0168-583X(93)90703-9	journal	January 1993
Strain-profile determination in ion-implanted single crystals using generalized simulated annealing Boulle, Alexandre; Debelle, Aurélien Journal of Applied Crystallography, Vol. 43, Issue 5 https://doi.org/10.1107/S0021889810030281	journal	September 2010
Electron-irradiation-induced crystalline-to-amorphous transition in β-SiC single crystals Inui, H.; Mori, H.; Suzuki, A. Philosophical Magazine B, Vol. 65, Issue 1 https://doi.org/10.1080/13642819208223042	journal	January 1992
Interplay between atomic disorder, lattice swelling, and defect energy in ion-irradiation-induced amorphization of SiC Debelle, A.; Boulle, A.; Chartier, A. Physical Review B, Vol. 90, Issue 17 https://doi.org/10.1103/PhysRevB.90.174112	journal	November 2014
X-ray diffuse scattering from stacking faults in thick 3C-SiC single crystals Boulle, A.; Chaussende, D.; Latu-Romain, L. Applied Physics Letters, Vol. 89, Issue 9 https://doi.org/10.1063/1.2338787	journal	August 2006
Study of the initial stages of defect generation in ion-irradiated MgO at elevated temperatures using high-resolution X-ray diffraction Bachiller-Perea, Diana; Debelle, Aurélien; Thomé, Lionel Journal of Materials Science, Vol. 51, Issue 3 https://doi.org/10.1007/s10853-015-9465-3	journal	October 2015
Handbook of SiC properties for fuel performance modeling Snead, Lance L.; Nozawa, Takashi; Katoh, Yutai Journal of Nuclear Materials, Vol. 371, Issue 1-3 https://doi.org/10.1016/j.jnucmat.2007.05.016	journal	September 2007
Damage accumulation in He implanted SiC at different temperatures: Damage accumulation in He implanted SiC Barbot, Jean François; Declémy, Alain; Beaufort, Marie-France physica status solidi (a), Vol. 210, Issue 1 https://doi.org/10.1002/pssa.201200364	journal	November 2012
Effect of Defect Clustering on Anomalous X-Ray Transmission Dederichs, P. H. Physical Review B, Vol. 1, Issue 4 https://doi.org/10.1103/PhysRevB.1.1306	journal	February 1970
Thermal effects in 10keV Si PKA cascades in 3C–SiC Farrell, David E.; Bernstein, Noam; Liu, Wing Kam Journal of Nuclear Materials, Vol. 385, Issue 3 https://doi.org/10.1016/j.jnucmat.2009.01.036	journal	April 2009
Dimensional isotropy of 6H and 3C SiC under neutron irradiation Snead, Lance L.; Katoh, Yutai; Koyanagi, Takaaki Journal of Nuclear Materials, Vol. 471 https://doi.org/10.1016/j.jnucmat.2016.01.010	journal	April 2016
Statistical Nature of Atomic Disorder in Irradiated Crystals Boulle, A.; Debelle, A. Physical Review Letters, Vol. 116, Issue 24 https://doi.org/10.1103/PhysRevLett.116.245501	journal	June 2016
Atomic scale simulation of defect production in irradiated 3C-SiC Devanathan, R.; Weber, W. J.; Gao, F. Journal of Applied Physics, Vol. 90, Issue 5 https://doi.org/10.1063/1.1389523	journal	September 2001
Cascade overlap and amorphization in $3 C - SiC :$ Defect accumulation, topological features, and disordering Gao, F.; Weber, W. J. Physical Review B, Vol. 66, Issue 2 https://doi.org/10.1103/PhysRevB.66.024106	journal	July 2002
Evolution of Defects and Defect Clusters in β-SiC Irradiated at High Temperature Xi, Jianqi; Zhang, Peng; He, Chaohui Fusion Science and Technology, Vol. 66, Issue 1 https://doi.org/10.13182/FST13-740	journal	August 2014
Radiation effects in SiC for nuclear structural applications Katoh, Yutai; Snead, Lance L.; Szlufarska, Izabela Current Opinion in Solid State and Materials Science, Vol. 16, Issue 3 https://doi.org/10.1016/j.cossms.2012.03.005	journal	June 2012
Monte Carlo simulations of defect recovery within a 10 keV collision cascade in 3C–SiC Rong, Zhouwen; Gao, Fei; Weber, William J. Journal of Applied Physics, Vol. 102, Issue 10 https://doi.org/10.1063/1.2812701	journal	November 2007
Ab initio based rate theory model of radiation induced amorphization in β-SiC Swaminathan, Narasimhan; Morgan, Dane; Szlufarska, Izabela Journal of Nuclear Materials, Vol. 414, Issue 3 https://doi.org/10.1016/j.jnucmat.2011.05.024	journal	July 2011
Amorphization and dynamic annealing of hexagonal SiC upon heavy-ion irradiation: Effects on swelling and mechanical properties Kerbiriou, Xavier; Costantini, Jean-Marc; Sauzay, Maxime Journal of Applied Physics, Vol. 105, Issue 7 https://doi.org/10.1063/1.3103771	journal	April 2009
Defect production, multiple ion–solid interactions and amorphization in SiC Gao, F.; Weber, W. J.; Devanathan, R. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 191, Issue 1-4 https://doi.org/10.1016/S0168-583X(02)00598-0	journal	May 2002
Artificially layered heteropolytypic structures based on SiC polytypes: molecular beam epitaxy, characterization and properties Fissel, A. Physics Reports, Vol. 379, Issue 3-4, p. 149-255 https://doi.org/10.1016/S0370-1573(02)00632-4	journal	May 2003
Irradiation-induced amorphization in β-SiC Weber, W. J.; Yu, N.; Wang, L. M. Journal of Nuclear Materials, Vol. 253, Issue 1-3 https://doi.org/10.1016/S0022-3115(97)00305-X	journal	March 1998
RaDMaX : a graphical program for the determination of strain and damage profiles in irradiated crystals Souilah, M.; Boulle, A.; Debelle, A. Journal of Applied Crystallography, Vol. 49, Issue 1 https://doi.org/10.1107/S1600576715021019	journal	February 2016
Investigation of radiation damage by X-ray diffraction Ehrhart, Peter Journal of Nuclear Materials, Vol. 216 https://doi.org/10.1016/0022-3115(94)90012-4	journal	October 1994
Characterization and modelling of the ion-irradiation induced disorder in 6H-SiC and 3C-SiC single crystals Debelle, A.; Thomé, L.; Dompoint, D. Journal of Physics D: Applied Physics, Vol. 43, Issue 45 https://doi.org/10.1088/0022-3727/43/45/455408	journal	October 2010
Electron-irradiation-induced crystalline to amorphous transition in α-Sic single crystals Inui, H.; Mori, H.; Fujita, H. Philosophical Magazine B, Vol. 61, Issue 1 https://doi.org/10.1080/13642819008208655	journal	January 1990
Amorphization of SiC under ion and neutron irradiation Snead, L. L.; Zinkle, S. J.; Hay, J. C. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 141, Issue 1-4 https://doi.org/10.1016/S0168-583X(98)00085-8	journal	May 1998
Temperature dependence of disorder accumulation and amorphization in Au-ion-irradiated $6 H − Si C$ Jiang, W.; Zhang, Y.; Weber, W. J. Physical Review B, Vol. 70, Issue 16 https://doi.org/10.1103/PhysRevB.70.165208	journal	October 2004
Amorphization Driven by Defect-Induced Mechanical Instability Jiang, Chao; Zheng, Ming-Jie; Morgan, Dane Physical Review Letters, Vol. 111, Issue 15 https://doi.org/10.1103/PhysRevLett.111.155501	journal	October 2013
Influence of irradiation spectrum and implanted ions on the amorphization of ceramics Zinkle, S. J.; Snead, L. L. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 116, Issue 1-4 https://doi.org/10.1016/0168-583X(96)00016-X	journal	August 1996
Ion-beam induced damage and annealing behaviour in SiC Wendler, E.; Heft, A.; Wesch, W. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 141, Issue 1-4 https://doi.org/10.1016/S0168-583X(98)00083-4	journal	May 1998
Silicon carbide and diamond for high temperature device applications Willander, Magnus; Friesel, Milan; Wahab, Qamar-ul Journal of Materials Science: Materials in Electronics, Vol. 17, Issue 1 https://doi.org/10.1007/s10854-005-5137-4	journal	January 2006
High-resolution electron microscopy study of electron-irradiation-induced crystalline-to-amorphous transition in α-SiC single crystals Inui, H.; Mori, H.; Sakata, T. Philosophical Magazine B, Vol. 66, Issue 6 https://doi.org/10.1080/13642819208220125	journal	December 1992
XRD investigation of the strain/stress state of ion-irradiated crystals Debelle, Aurélien; Declémy, Alain Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 268, Issue 9 https://doi.org/10.1016/j.nimb.2010.01.009	journal	May 2010
Positron annihilation spectroscopy investigation of vacancy clusters in silicon carbide: Combining experiments and electronic structure calculations Wiktor, Julia; Kerbiriou, Xavier; Jomard, Gérald Physical Review B, Vol. 89, Issue 15 https://doi.org/10.1103/PhysRevB.89.155203	journal	April 2014
Atomistic modeling of finite-temperature properties of crystalline β-SiC Li, Ju; Porter, Lisa; Yip, Sidney Journal of Nuclear Materials, Vol. 255, Issue 2-3 https://doi.org/10.1016/S0022-3115(98)00034-8	journal	June 1998
Mechanical properties and elastic constants due to damage accumulation and amorphization in SiC Gao, F.; Weber, W. J. Physical Review B, Vol. 69, Issue 22 https://doi.org/10.1103/PhysRevB.69.224108	journal	June 2004
Non-monotonic temperature dependence of radiation defect dynamics in silicon carbide Bayu Aji, L. B.; Wallace, J. B.; Shao, L. Scientific Reports, Vol. 6, Issue 1 https://doi.org/10.1038/srep30931	journal	August 2016
Reducing Planar Defects in 3C–SiC Nagasawa, H.; Yagi, K.; Kawahara, T. Chemical Vapor Deposition, Vol. 12, Issue 8-9 https://doi.org/10.1002/cvde.200506466	journal	September 2006
Time constant of defect relaxation in ion-irradiated 3C-SiC Wallace, J. B.; Bayu Aji, L. B.; Shao, L. Applied Physics Letters, Vol. 106, Issue 20 https://doi.org/10.1063/1.4921471	journal	May 2015
Damage buildup in Ar-ion-irradiated 3 C -SiC at elevated temperatures Wallace, J. B.; Bayu Aji, L. B.; Li, T. T. Journal of Applied Physics, Vol. 118, Issue 10 https://doi.org/10.1063/1.4929953	journal	September 2015

Cited By (3)

Comparative study of radiation defect dynamics in 3C-SiC by X-ray diffraction, Raman scattering, and ion channeling Bayu Aji, L. B.; Stavrou, E.; Wallace, J. B. Applied Physics A, Vol. 125, Issue 1 https://doi.org/10.1007/s00339-018-2325-7	journal	December 2018
Strain engineering 4H-SiC with ion beams Zhang, F. X.; Tong, Y.; Xue, Haizhou Applied Physics Letters, Vol. 114, Issue 22 https://doi.org/10.1063/1.5109226	journal	June 2019
Ionization-induced thermally activated defect-annealing process in SiC Debelle, Aurélien; Thomé, Lionel; Monnet, Isabelle Physical Review Materials, Vol. 3, Issue 6 https://doi.org/10.1103/physrevmaterials.3.063609	journal	June 2019

Similar Records

Damage buildup in Ar-ion-irradiated 3C-SiC at elevated temperatures

Journal Article · Mon Sep 14 00:00:00 EDT 2015 · Journal of Applied Physics · OSTI ID:1840129

Wallace, J. B.; Bayu Aji, L. B.; Li, T. T.; +2 more

Time constant of defect relaxation in ion-irradiated 3C-SiC

Journal Article · Mon May 18 00:00:00 EDT 2015 · Applied Physics Letters · OSTI ID:1840129

Wallace, J. B.; Bayu Aji, L. B.; Kucheyev, S. O.; +1 more

Effects of collision cascade density on radiation defect dynamics in 3C-SiC

Journal Article · Fri Mar 17 00:00:00 EDT 2017 · Scientific Reports · OSTI ID:1840129

Bayu Aji, L. B.; Wallace, J. B.; Kucheyev, S. O.

Related Subjects

36 MATERIALS SCIENCE

Title: The amorphization of 3C-SiC irradiated at moderately elevated temperatures as revealed by X-ray diffraction

Citation Formats

References (41)

Cited By (3)

Similar Records

Related Subjects