Photogating-driven enhanced responsivity in a few-layered ReSe2 phototransistor

Patil, Prasanna D.; Wasala, Milinda; Alkhaldi, Rana; Weber, Lincoln; Kovi, Kiran Kumar; Chakrabarti, Bhaswar; Nash, Jawnaye A.; Rhodes, Daniel; Rosenmann, Daniel; Divan, Ralu; Sumant, Anirudha V.; Balicas, Luis; Pradhan, Nihar R.; Talapatra, Saikat

doi:10.1039/d1tc01973b

Title: Photogating-driven enhanced responsivity in a few-layered ReSe₂ phototransistor

Journal Article · Mon Jul 12 00:00:00 EDT 2021 · Journal of Materials Chemistry C

DOI:https://doi.org/10.1039/d1tc01973b· OSTI ID:1839982

^[1];

^[2]; Alkhaldi, Rana ^[1]; Weber, Lincoln ^[1];

^[3]; Chakrabarti, Bhaswar ^[4]; Nash, Jawnaye A. ^[5]; Rhodes, Daniel ^[6]; Rosenmann, Daniel ^[3]; Divan, Ralu ^[3];

^[3];

^[6];

^[7];

^[1]

Southern Illinois Univ., Carbondale, IL (United States)
Southern Illinois Univ., Carbondale, IL (United States); Great Basin College, Elko, NV (United States)
Argonne National Lab. (ANL), Argonne, IL (United States)
Argonne National Lab. (ANL), Argonne, IL (United States); Univ. of Chicago, IL (United States)
Jackson State Univ., Jackson, MS (United States)
National High Magnetic Field Lab., Tallahassee, FL (United States)
Argonne National Lab. (ANL), Argonne, IL (United States); Jackson State Univ., Jackson, MS (United States); National High Magnetic Field Lab., Tallahassee, FL (United States)

A wide variety of two-dimensional (2D) metal dichalcogenide compounds have recently attracted much research interest due to their very high photoresponsivities (R) making them excellent candidates for optoelectronic applications. High R in 2D photoconductors is associated with trap state dynamics leading to a photogating effect, which is often manifested by a fractional power dependence (γ) of the photocurrent (I_ph) at an effective illumination intensity (P_eff). Furthermore, we present photoconductivity studies as a function of gate voltages, over a wide temperature range (20 K to 300 K) of field-effect transistors fabricated using thin layers of mechanically exfoliated Rhenium Diselenide (ReSe₂). We obtain very high responsivities R ~ 16500 A/W and external quantum efficiency (EQE) ~ 3.2 × 106% (at 140 K, V_g = 60 V and P_eff = 0.2 nW). A strong correlation between R and γ was established by investigating the dependence of these two quantities at various gate voltages and over a wide range of temperatures. Such correlations indicate the importance of trap state mediated photogating and its role in promoting high photo-responsivities in these materials. We believe such correlations can offer valuable insights for the design and development of high-performance photoactive devices using 2D materials.

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Research Organization:: Argonne National Lab. (ANL), Argonne, IL (United States)

Sponsoring Organization:: USDOE Office of Science (SC)

Grant/Contract Number:: AC02-06CH11357

OSTI ID:: 1839982

Alternate ID(s):: OSTI ID: 1812403

Journal Information:: Journal of Materials Chemistry C, Vol. 9, Issue 36; ISSN 2050-7526

Publisher:: Royal Society of ChemistryCopyright Statement

Country of Publication:: United States

Language:: English

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