Resistive Switching Memory Performance of Two-Dimensional Polyimide Covalent Organic Framework Films

Sun, Bing; Li, Xinle; Feng, Tiantian; Cai, Songliang; Chen, Teresa; Zhu, Chenhui; Zhang, Jian; Wang, Dong; Liu, Yi

doi:10.1021/acsami.0c15789

Title: Resistive Switching Memory Performance of Two-Dimensional Polyimide Covalent Organic Framework Films

Journal Article · Sun Nov 08 00:00:00 EST 2020 · ACS Applied Materials and Interfaces

DOI:https://doi.org/10.1021/acsami.0c15789· OSTI ID:1834566

^[1]; Li, Xinle ^[2]; Feng, Tiantian ^[3];

^[4]; Chen, Teresa ^[2]; Zhu, Chenhui ^[2];

^[2];

^[5];

^[2]

China Univ. of Geosciences, Beijing (China); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
China Univ. of Geosciences, Beijing (China); Chinese Academy of Sciences, Beijing (China)
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); South China Normal Univ., Guangzhou (China)
Chinese Academy of Sciences, Beijing (China)

Two-dimensional polyimide covalent organic framework (2D PI-NT COF) films were constructed on indium tin oxide-coated glass substrates to fabricate two-terminal sandwiched resistive memory devices. The 2D PI-NT COF films condensated from the reaction between 4,4',4"-triaminotriphenylamine and naphthalene-1,4,5,8-tetracarboxylic dianhydride under solvothermal conditions demonstrated high crystallinity, good orientation preference, tunable thickness, and low surface roughness. The well-aligned electron-donor (triphenylamine unit) and -acceptor (naphthalene diimide unit) arrays rendered the 2D PI-NT COF films a promising candidate for electronic applications. The memory devices based on 2D PI-NT COF films exhibited a typical write-once-read-many-time resistive switching behavior under an operating voltage of +2.30 V on the positive scan and -2.64 V on the negative scan. A high ON/OFF current ratio (>10⁶ for the positive scan and 10⁴-10⁶ for the negative scan) and long-term retention time indicated the high fidelity, low error, and high stability of the resistive memory devices. The memory behavior was attributed to an electric field-induced intramolecular charge transfer in an ordered donor-acceptor system, which provided the effective charge-transfer channels for injected charge carriers. Furthermore, this work represents the first example that explores the resistive memory properties of 2D PI-COF films, shedding light on the potential application of 2D COFs as information storage media.

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Research Organization:: Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division

Grant/Contract Number:: AC02-05CH11231

OSTI ID:: 1834566

Journal Information:: ACS Applied Materials and Interfaces, Vol. 12, Issue 46; ISSN 1944-8244

Publisher:: American Chemical Society (ACS)Copyright Statement

Country of Publication:: United States

Language:: English

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37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
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interfacial synthesis
nonvolatile resistive memory device
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Title: Resistive Switching Memory Performance of Two-Dimensional Polyimide Covalent Organic Framework Films

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