Net versus gross erosion of silicon carbide in DIII-D divertor

Rudakov, D. L.; Wampler, W. R.; Abrams, T.; Ding, R.; Boedo, J. A.; Bringuier, S.; Bykov, I.; Chrobak, C. P.; Elder, J. D.; Guo, H. Y.; Lasnier, C. J.; Mathison, E.; McLean, A. G.; Sinclair, G.; Stangeby, P. C.; Thomas, D. M.; Unterberg, E. A.; Wang, H.; Watkins, J. G.

doi:10.1088/1402-4896/ab61dc

Title: Net versus gross erosion of silicon carbide in DIII-D divertor

Journal Article · Wed Mar 18 00:00:00 EDT 2020 · Physica Scripta

DOI:https://doi.org/10.1088/1402-4896/ab61dc· OSTI ID:1832712

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^[3]; Ding, R. ^[4]; Boedo, J. A. ^[1];

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^[3]; Elder, J. D. ^[5]; Guo, H. Y. ^[3]; Lasnier, C. J. ^[6]; Mathison, E. ^[3]; McLean, A. G. ^[6];

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^[5]; Thomas, D. M. ^[3];

^[7]; Wang, H. ^[3]; Watkins, J. G. ^[8]

Univ. of California, San Diego, CA (United States)
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
General Atomics, San Diego, CA (United States)
Chinese Academy of Sciences (CAS), Hefei (China)
Univ. of Toronto, ON (Canada)
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sandia National Lab. (SNL-CA), Livermore, CA (United States)

Gross and net erosion rates of silicon from silicon carbide (SiC) coatings were measured in the divertor of DIII-D under well diagnosed reactor-relevant plasma conditions. Amorphous and crystalline SiC coatings on graphite with thickness of ~80 nm and ~250 μm, respectively, were exposed near an attached outer strike point of lower single null L-mode plasmas using the Divertor Material Evaluation System (DiMES). Plasma density and electron temperature near the center of the coatings were n_e ~ 4 × 10¹⁹ m^-3 and T _e ~ 23 eV. Gross erosion of Si from all samples was measured spectroscopically using the Si II 636 nm line. It was found to be a factor of ~4 higher for the amorphous coatings compared to the crystalline one. The thin amorphous coatings allowed measurements of net Si erosion with Rutherford backscattering. Net average Si erosion rate of ~3 × 10¹⁶ cm^-2 s^-1 was measured on the amorphous coatings with toroidal extent of 1 mm, where, according to ERO code modeling, the local redeposition of Si was about 30%. Using this rate, spectroscopic measurements, measured D⁺ ion fluxes, and corrections from ERO-OEDGE modeling, effective SXB coefficient for the Si II 636 nm line of ~52 and Si sputtering yield of ~0.017 Si/D were calculated. Finally, deuterium retention on SiC coatings was measured by 2.5 MeV ³He nuclear reaction analysis at 0.5–2.5 × 10¹⁷ atoms cm^-2, consistent with retention due to implantation into a surface undergoing net erosion.

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Research Organization:: Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA); National Natural Science Foundation of China (NSFC)

Grant/Contract Number:: AC05-00OR22725; FG02-07ER54917; FC02-04ER54698; NA0003525; AC52-07NA27344; SC0018423; 11861131010; 11675218

OSTI ID:: 1832712

Alternate ID(s):: OSTI ID: 1860688

Report Number(s):: LLNL-JRNL-830756; TRN: US2216761

Journal Information:: Physica Scripta, Vol. T171, Issue T171; ISSN 0031-8949

Publisher:: IOP PublishingCopyright Statement

Country of Publication:: United States

Language:: English

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