Wake-up and fatigue mechanisms in ferroelectric Hf0.5Zr0.5O2 films with symmetric RuO2 electrodes

Fields, Shelby S.; Smith, Sean W.; Jaszewski, Samantha T.; Mimura, Takanori; Dickie, Diane A.; Esteves, Giovanni; David Henry, M.; Wolfley, Steve L.; Davids, Paul S.; Ihlefeld, Jon F.

doi:10.1063/5.0064145

Title: Wake-up and fatigue mechanisms in ferroelectric Hf_0.5Zr_0.5O₂ films with symmetric RuO₂ electrodes

Journal Article · Mon Oct 04 00:00:00 EDT 2021 · Journal of Applied Physics

DOI:https://doi.org/10.1063/5.0064145· OSTI ID:1831810

^[1]; Smith, Sean W. ^[2]; Jaszewski, Samantha T. ^[1]; Mimura, Takanori ^[1];

^[1];

^[2]; David Henry, M. ^[2];

^[2];

^[1]

Univ. of Virginia, Charlottesville, VA (United States)
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

In this work, the mechanisms leading to wake-up and fatigue in ferroelectric hafnium zirconium oxide thin film devices with symmetric RuO₂ electrodes are investigated via polarization, relative permittivity, dielectric nonlinearity, pyroelectric coefficient, and microfocus X-ray diffraction (XRD) measurements. The devices are observed to wake-up for up to 10³ bipolar pulsed field cycles, after which fatigue occurs with the polarization approaching zero following 10⁸ cycles. Wake-up is accompanied by a decrease in both high-field permittivity and hysteresis loop pinching and an increase in pyroelectric coefficient, indicating that the wake-up process involves a combination of transformations from the tetragonal to the orthorhombic phase and domain depinning from defect redistribution. Fatigue is observed to coincide with an increase in irreversible domain wall motion and a decrease in pyroelectric coefficient. Finite pyroelectric coefficients are measured on fully fatigued devices, indicating that domain pinning is a strong contributor to fatigue and that fatigued devices contain domain structures that are unable to switch under the fields applied for measurement. Microfocus XRD patterns measured on each device reveal that the phase constitution is qualitatively unaffected by the field cycling and resultant polarization fatigue. This data indicates that the wake-up process has contributions from both phase transformations and domain depinning, whereas the fatigue process is driven primarily by domain pinning, and the near-zero measured switchable polarization is actually a poled device with immobile domains. These observations provide insight into the physical changes occurring during field cycling of HfO₂-based ferroelectrics while examining a possible oxide electrode material for silicon CMOS device implementation.

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Research Organization:: Pennsylvania State Univ., University Park, PA (United States)

Sponsoring Organization:: USDOE Laboratory Directed Research and Development (LDRD) Program; USDOE Office of Science (SC), Basic Energy Sciences (BES); USDOE National Nuclear Security Administration (NNSA); National Science Foundation (NSF)

Grant/Contract Number:: SC0021118; NA0003525; CHE-2018870; DGE-1842490

OSTI ID:: 1831810

Alternate ID(s):: OSTI ID: 1823498

Journal Information:: Journal of Applied Physics, Vol. 130, Issue 13; ISSN 0021-8979

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Title: Wake-up and fatigue mechanisms in ferroelectric Hf0.5Zr0.5O2 films with symmetric RuO2 electrodes

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Title: Wake-up and fatigue mechanisms in ferroelectric Hf_0.5Zr_0.5O₂ films with symmetric RuO₂ electrodes