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Title: Mapping the unoccupied state dispersions in Ta2NiSe5 with resonant inelastic x-ray scattering

Journal Article · · Physical Review B
ORCiD logo [1]; ORCiD logo [2];  [3];  [4];  [5]; ORCiD logo [6];  [7];  [8];  [9];  [10];  [11]
  1. Universite de Fribourg (Switzerland)
  2. Universität Potsdam (Germany)
  3. Universite de Fribourg (Switzerland); LUT University, Lappeenranta (Finland)
  4. Paul Scherrer Inst. (PSI), Villigen (Switzerland). Swiss Light Source; Chinese Academy of Sciences (CAS), Beijing (China)
  5. Paul Scherrer Inst. (PSI), Villigen (Switzerland). Swiss Light Source; Brookhaven National Lab. (BNL), Upton, NY (United States)
  6. Paul Scherrer Inst. (PSI), Villigen (Switzerland). Swiss Light Source; Science and Technology Facilities Council (STFC), Oxford (United Kingdom). Diamond Light Source, Ltd.
  7. Nagoya Univ. (Japan)
  8. Okayama Univ. (Japan)
  9. Max Planck Institute for Solid State Research, Stuttgart (Germany); Univ. of Tokyo (Japan)
  10. Paul Scherrer Inst. (PSI), Villigen (Switzerland). Swiss Light Source
  11. Waseda Univ., Shinjuku (Japan)

The transition metal chalcogenide Ta2NiSe5 undergoes a second-order phase transition at Tc = 328 K involving a small lattice distortion. Below Tc, a band gap at the center of its Brillouin zone increases up to about 0.35 eV. In this work, we study the electronic structure of Ta2NiSe5 in its low-temperature semiconducting phase, using resonant inelastic x-ray scattering (RIXS) at the Ni L3-edge. In addition to a weak fluorescence response, we observe a collection of intense Raman-like peaks that we attribute to electron-hole excitations. Using density functional theory calculations of its electronic band structure, we identify the main Raman-like peaks as interband transitions between valence and conduction bands. Further, by performing angle-dependent RIXS measurements, we uncover the dispersion of these electron-hole excitations that allows us to extract the low-energy boundary of the electron-hole continuum. From the dispersion of the valence band measured by angle-resolved photoemission spectroscopy, we derive the effective mass of the lowest unoccupied conduction band.

Research Organization:
Brookhaven National Lab. (BNL), Upton, NY (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES); Swiss National Science Foundation (SNSF); European Research Council (ERC)
Grant/Contract Number:
SC0012704; P00P2_170597; CRSII2_141962; CRSII2_160765; FP7/2007−2013; 290605
OSTI ID:
1827150
Report Number(s):
BNL-222116-2021-JAAM; TRN: US2216036
Journal Information:
Physical Review B, Vol. 102, Issue 8; ISSN 2469-9950
Publisher:
American Physical Society (APS)Copyright Statement
Country of Publication:
United States
Language:
English

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