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Title: Ultrafast bipolar conductivity driven by intense single-cycle terahertz pulses in a topological insulator Bi2Se3

Journal Article · · Journal of Optics

We present the measurement of ultrafast terahertz (THz) conductivity of a 50 nm thick topological insulator Bi2Se3 at low temperature 5 K by using a THz pump and THz probe spectroscopy scheme. Here, the THz conductivity driven by a single-cycle intense THz pump exhibits a bipolar lineshape and frequency-dependent relaxation dynamics due to the separated surface and bulk charge carriers with distinctly different scattering rates and relaxation times. We also demonstrate THz pump field-dependent excitation of the surface and bulk spectral weights, which suggests one of the optimal THz excitation conditions for generating the most charge carriers from the topology-protected surface state relative to the bulk. This also allows THz control of surface and bulk transport channels in a selective way.

Research Organization:
Ames Lab., Ames, IA (United States); Univ. of Alabama, Birmingham, AL (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division; USDOE Office of Science (SC), Basic Energy Sciences (BES)
Grant/Contract Number:
AC02-07CH11358; SC0019137
OSTI ID:
1827102
Alternate ID(s):
OSTI ID: 1971732
Report Number(s):
IS-J-10,602; DEAC02- 07CH11358
Journal Information:
Journal of Optics, Vol. 23, Issue 10; ISSN 2040-8978
Publisher:
IOP PublishingCopyright Statement
Country of Publication:
United States
Language:
English

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