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Title: Narrow-band high-lying excitons with negative-mass electrons in monolayer WSe2

Journal Article · · Nature Communications
ORCiD logo [1]; ORCiD logo [2]; ORCiD logo [1];  [1]; ORCiD logo [3];  [1];  [1];  [1];  [1]; ORCiD logo [4]; ORCiD logo [4];  [1]; ORCiD logo [3]; ORCiD logo [1]; ORCiD logo [5];  [6]; ORCiD logo [2]; ORCiD logo [1]
  1. Univ. of Regensburg (Germany)
  2. Univ. of California, Berkeley, CA (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
  3. Univ. of Cambridge (United Kingdom). Cavendish Lab.
  4. National Institute for Materials Science (NIMS), Tsukuba (Japan)
  5. Univ. of Regensburg (Germany); Dresden Univ. of Technology (Germany)
  6. Univ. of California, Berkeley, CA (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Yale Univ., New Haven, CT (United States)

Monolayer transition-metal dichalcogenides (TMDCs) show a wealth of exciton physics. Here, we report the existence of a new excitonic species, the high-lying exciton (HX), in single-layer WSe2 with an energy of ~3.4 eV, almost twice the band-edge A-exciton energy, with a linewidth as narrow as 5.8 meV. The HX is populated through momentum-selective optical excitation in the K-valleys and is identified in upconverted photoluminescence (UPL) in the UV spectral region. Strong electron-phonon coupling results in a cascaded phonon progression with equidistant peaks in the luminescence spectrum, resolvable to ninth order. Ab initio GW-BSE calculations with full electron-hole correlations explain HX formation and unmask the admixture of upper conduction-band states to this complex many-body excitation. These calculations suggest that the HX is comprised of electrons of negative mass. The coincidence of such high-lying excitonic species at around twice the energy of band-edge excitons rationalizes the excitonic quantum-interference phenomenon recently discovered in optical second-harmonic generation (SHG) and explains the efficient Auger-like annihilation of band-edge excitons.

Research Organization:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
Grant/Contract Number:
AC02-05CH11231
OSTI ID:
1825017
Journal Information:
Nature Communications, Vol. 12, Issue 1; ISSN 2041-1723
Publisher:
Nature Publishing GroupCopyright Statement
Country of Publication:
United States
Language:
English

References (41)

Intravalley Spin–Flip Relaxation Dynamics in Single-Layer WS 2 journal September 2018
On the existence of bielectrons in BiI3 journal November 1973
Colloquium : Excitons in atomically thin transition metal dichalcogenides journal April 2018
Observation of exciton-phonon coupling in MoSe 2 monolayers journal July 2018
Multiphonon resonant Raman scattering in MoS 2 journal March 2014
Auger recombination of dark excitons in WS 2 and WSe 2 monolayers journal August 2016
Intrinsic transport properties of electrons and holes in monolayer transition-metal dichalcogenides journal July 2014
Unifying Optical Selection Rules for Excitons in Two Dimensions: Band Topology and Winding Numbers journal February 2018
Observation of chiral phonons journal February 2018
Intervalley scattering by acoustic phonons in two-dimensional MoS2 revealed by double-resonance Raman spectroscopy journal March 2017
Valley polarization and intervalley scattering in monolayer MoS 2 journal November 2012
Tightly Bound Excitons in Monolayer WSe 2 journal July 2014
Spin and pseudospins in layered transition metal dichalcogenides journal April 2014
BerkeleyGW: A massively parallel computer package for the calculation of the quasiparticle and optical properties of materials and nanostructures journal June 2012
Quantum interference in second-harmonic generation from monolayer WSe2 journal January 2019
k · p theory for two-dimensional transition metal dichalcogenide semiconductors journal April 2015
Electron correlation in semiconductors and insulators: Band gaps and quasiparticle energies journal October 1986
Electrical control of second-harmonic generation in a WSe2 monolayer transistor journal April 2015
Continuous Wave Sum Frequency Generation and Imaging of Monolayer and Heterobilayer Two-Dimensional Semiconductors journal December 2019
Optical Spectrum of MoS 2 : Many-Body Effects and Diversity of Exciton States journal November 2013
Holstein polaron in a valley-degenerate two-dimensional semiconductor journal May 2018
Resonant internal quantum transitions and femtosecond radiative decay of excitons in monolayer WSe2 journal July 2015
Intrinsic homogeneous linewidth and broadening mechanisms of excitons in monolayer transition metal dichalcogenides journal September 2015
Probing excitonic dark states in single-layer tungsten disulphide journal August 2014
Deterministic transfer of two-dimensional materials by all-dry viscoelastic stamping journal April 2014
Controlling photons using electromagnetically induced transparency journal September 2001
Efficient phonon cascades in WSe2 monolayers journal January 2021
Polymer Coatings Tune Electromagnetically Induced Transparency in Two-Dimensional Semiconductors journal November 2019
Electronic structures and theoretical modelling of two-dimensional group-VIB transition metal dichalcogenides journal January 2015
Excitonic linewidth and coherence lifetime in monolayer transition metal dichalcogenides journal November 2016
Defect Structure of Localized Excitons in a WSe 2 Monolayer journal July 2017
Absorption, Photoluminescence, and Resonant Raman Scattering in Bil3 journal February 1974
Twist-angle engineering of excitonic quantum interference and optical nonlinearities in stacked 2D semiconductors journal March 2021
Electron-hole excitations and optical spectra from first principles journal August 2000
Nonlinear photoluminescence in atomically thin layered WSe 2 arising from diffusion-assisted exciton-exciton annihilation journal October 2014
Generation and Evolution of Spin-, Valley-, and Layer-Polarized Excited Carriers in Inversion-Symmetric WSe 2 journal December 2016
Valley depolarization due to intervalley and intravalley electron-hole exchange interactions in monolayer MoS 2 journal May 2014
Camel's back excitons in GaP journal March 1978
Optically active quantum dots in monolayer WSe2 journal May 2015
Enabling valley selective exciton scattering in monolayer WSe2 through upconversion journal April 2017
Phonon-assisted oscillatory exciton dynamics in monolayer MoSe2 journal October 2017

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