Carrier-specific dynamics in 2H-MoTe2 observed by femtosecond soft x-ray absorption spectroscopy using an x-ray free-electron laser

Britz, Alexander; Attar, Andrew R.; Zhang, Xiang; Chang, Hung-Tzu; Nyby, Clara; Krishnamoorthy, Aravind; Park, Sang Han; Kwon, Soonnam; Kim, Minseok; Nordlund, Dennis; Sainio, Sami; Heinz, Tony F.; Leone, Stephen R.; Lindenberg, Aaron M.; Nakano, Aiichiro; Ajayan, Pulickel; Vashishta, Priya; Fritz, David; Lin, Ming-Fu; Bergmann, Uwe

doi:10.1063/4.0000048

Title: Carrier-specific dynamics in 2H-MoTe₂ observed by femtosecond soft x-ray absorption spectroscopy using an x-ray free-electron laser

Journal Article · Wed Jan 13 00:00:00 EST 2021 · Structural Dynamics

DOI:https://doi.org/10.1063/4.0000048· OSTI ID:1817879

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^[10]; Lindenberg, Aaron M. ^[11];

^[6]; Ajayan, Pulickel ^[3]; Vashishta, Priya ^[6]; Fritz, David ^[12];

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SLAC National Accelerator Lab., Menlo Park, CA (United States). Photon Ultrafast Laser Science and Engineering Inst. (PULSE); SLAC National Accelerator Lab., Menlo Park, CA (United States). Linac Coherent Light Source (LCLS)
SLAC National Accelerator Lab., Menlo Park, CA (United States). Photon Ultrafast Laser Science and Engineering Inst. (PULSE); SLAC National Accelerator Lab., Menlo Park, CA (United States). Linac Coherent Light Source (LCLS); Stanford Univ., CA (United States). SUNCAT Center for Interface Science and Catalysis
Rice Univ., Houston, TX (United States)
Univ. of California, Berkeley, CA (United States)
SLAC National Accelerator Lab., Menlo Park, CA (United States). Photon Ultrafast Laser Science and Engineering Inst. (PULSE); SLAC National Accelerator Lab., Menlo Park, CA (United States). Stanford Institute for Materials and Energy Science (SIMES)
Univ. of Southern California, Los Angeles, CA (United States). Collaboratory for Advanced Computing and Simulations
Pohang Accelerator Lab. (PAL-XFEL) (Korea, Republic of)
SLAC National Accelerator Lab., Menlo Park, CA (United States). Stanford Synchrotron Radiation Lightsource (SSRL)
SLAC National Accelerator Lab., Menlo Park, CA (United States). Photon Ultrafast Laser Science and Engineering Inst. (PULSE); Stanford Univ., CA (United States). SUNCAT Center for Interface Science and Catalysis; Stanford Univ., CA (United States)
Univ. of California, Berkeley, CA (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
SLAC National Accelerator Lab., Menlo Park, CA (United States). Photon Ultrafast Laser Science and Engineering Inst. (PULSE); SLAC National Accelerator Lab., Menlo Park, CA (United States). Stanford Institute for Materials and Energy Science (SIMES); Stanford Univ., CA (United States)
SLAC National Accelerator Lab., Menlo Park, CA (United States). Linac Coherent Light Source (LCLS)
SLAC National Accelerator Lab., Menlo Park, CA (United States). Photon Ultrafast Laser Science and Engineering Inst. (PULSE)

Femtosecond carrier dynamics in layered 2H-MoTe₂ semiconductor crystals have been investigated using soft x-ray transient absorption spectroscopy at the x-ray free-electron laser (XFEL) of the Pohang Accelerator Laboratory. Following above-bandgap optical excitation of 2H-MoTe₂, the photoexcited hole distribution is directly probed via short-lived transitions from the Te 3d _5/2 core level (M₅-edge, 572-577 eV) to transiently unoccupied states in the valence band. The optically excited electrons are separately probed via the reduced absorption probability at the Te M₅-edge involving partially occupied states of the conduction band. A 400 ± 110 fs delay is observed between this transient electron signal near the conduction band minimum compared to higher-lying states within the conduction band, which we assign to hot electron relaxation. Additionally, the transient absorption signals below and above the Te M₅ edge, assigned to photoexcited holes and electrons, respectively, are observed to decay concomitantly on a 1-2 ps timescale, which is interpreted as electron-hole recombination. The present work provides a benchmark for applications of XFELs for soft x-ray absorption studies of carrier-specific dynamics in semiconductors, and future opportunities enabled by this method are discussed.

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Research Organization:: Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States); SLAC National Accelerator Laboratory (SLAC), Menlo Park, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES). Chemical Sciences, Geosciences & Biosciences Division; W. M. Keck Foundation; US Air Force Office of Scientific Research (AFOSR); US Army Research Office (ARO); Ministry of Education of Korea; USDOE

Grant/Contract Number:: AC02-05CH11231; SC0014607; 2020R1A2C1007416; 2018R1D1A1B07046676; S10OD023532; 046300; A9550-19-1-0314; FA9550-14-1-0154; FA9550-15-1-0037; W911NF-14-1-0383; AC02-76SF00515; FWP 100435; DEAC02-05-CH11231; KC3103

OSTI ID:: 1817879

Alternate ID(s):: OSTI ID: 1755665; OSTI ID: 1759111

Journal Information:: Structural Dynamics, Vol. 8, Issue 1; ISSN 2329-7778

Publisher:: American Crystallographic Association/AIPCopyright Statement

Country of Publication:: United States

Language:: English

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Title: Carrier-specific dynamics in 2H-MoTe2 observed by femtosecond soft x-ray absorption spectroscopy using an x-ray free-electron laser

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Title: Carrier-specific dynamics in 2H-MoTe₂ observed by femtosecond soft x-ray absorption spectroscopy using an x-ray free-electron laser