Simulation and Modeling of Time-Resolved X-Ray Detector for the Saturn Accelerator

Gao, Xujiao; Looker, Quinn; Webb, Timothy J.; Depriest, K. Russell; Ulmen, Benjamin

doi:10.1109/tns.2021.3085213

Title: Simulation and Modeling of Time-Resolved X-Ray Detector for the Saturn Accelerator

Journal Article · Wed Jun 09 00:00:00 EDT 2021 · IEEE Transactions on Nuclear Science

DOI:https://doi.org/10.1109/tns.2021.3085213· OSTI ID:1817705

Gao, Xujiao ^[1]; Looker, Quinn ^[1]; Webb, Timothy J. ^[1]; Depriest, K. Russell ^[1]; Ulmen, Benjamin ^[1]

Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

In this work, we present the technology-aided computer design (TCAD) device simulation and modeling of a silicon p-i-n diode for detecting time-dependent X-ray radiation. We show that the simulated forward and reverse breakdown current–voltage characteristics agree well with the measured data under nonradiation environment by only calibrating carrier lifetimes for the forward bias case and avalanche model critical fields for the reverse bias condition. Using the calibrated parameters and other nominal material properties, we simulated the radiation responses of the p-i-n diode and compared with experimental data when the diode was exposed to X-ray radiation at Sandia’s Saturn facility and the Idaho State University (ISU) TriMeV facility. For Saturn’s Gaussian dose-rate pulses, we show three findings from TCAD simulations. First, the simulated photocurrents are in excellent agreement with the measured data for two dose-rate pulses with peak values of 1.16×10¹⁰ and 1.88×10¹⁰ rad(Si)/s. Second, the simulation results of high dose-rate pulses predict increased delayed photocurrents with longer time tails in the diode electrical responses due to excess carrier generation. Third, simulated peak values of diode radiation responses versus peak dose rates at different bias conditions provide useful guidance to determine the dose-rate range that the p-i-n diode can reliably detect in experiment. For TriMeV’s non-Gaussian dose-rate pulse, our simulated diode response is in decent agreement with the measured data without further calibration. We also studied the effects of device geometry, recombination process, and dose-rate enhancement via TCAD simulations to understand the higher measured response in the time after the peak dose-rate radiation for the p-i-n diode exposed to TriMeV irradiation.

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Research Organization:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA); USDOE Laboratory Directed Research and Development (LDRD) Program

Grant/Contract Number:: NA0003525; 213089

OSTI ID:: 1817705

Report Number(s):: SAND-2021-6484J; 696538; TRN: US2213837

Journal Information:: IEEE Transactions on Nuclear Science, Vol. 68, Issue 7; ISSN 0018-9499

Publisher:: IEEECopyright Statement

Country of Publication:: United States

Language:: English

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46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
Technology Aided Computer Design (TCAD)
dose-rate radiation
X-ray detector
photo-current
Saturn accelerator

Title: Simulation and Modeling of Time-Resolved X-Ray Detector for the Saturn Accelerator

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