Recombination rate analysis in long minority carrier lifetime mid-wave infrared InGaAs/InAsSb superlattices

Carrasco, Rigo A.; Morath, Christian P.; Grant, Perry C.; Ariyawansa, Gamini; Stephenson, Chad A.; Kadlec, Clark N.; Hawkins, Samuel D.; Klem, John F.; Shaner, Eric A.; Steenbergen, Elizabeth H.; Schaefer, Stephen T.; Johnson, Shane R.; Webster, Preston T.

doi:10.1063/5.0047178

Title: Recombination rate analysis in long minority carrier lifetime mid-wave infrared InGaAs/InAsSb superlattices

Journal Article · Fri May 14 00:00:00 EDT 2021 · Journal of Applied Physics

DOI:https://doi.org/10.1063/5.0047178· OSTI ID:1810399

^[1];

^[2]; Grant, Perry C. ^[2]; Ariyawansa, Gamini ^[3]; Stephenson, Chad A. ^[4]; Kadlec, Clark N. ^[4]; Hawkins, Samuel D. ^[4];

^[4]; Shaner, Eric A. ^[4];

^[2];

^[5];

^[5]; Webster, Preston T. ^[2]

Air Force Research Lab. (AFRL), Kirtland AFB, NM (United States). Space Vehicles Directorate; Applied Technology Associates, Albuquerque, NM (United States); New Mexico State Univ., Las Cruces, NM (United States). Dept. of Physics
Air Force Research Lab. (AFRL), Kirtland AFB, NM (United States). Space Vehicles Directorate
Air Force Research Lab. (AFRL), Wright-Patterson AFB, OH (United States). Sensors Directorate
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Arizona State Univ., Tempe, AZ (United States). Center for Photonics Innovation and School of Electrical, Computer, and Energy Engineering

Gallium is incorporated into the strain-balanced In(Ga)As/InAsSb superlattice system to achieve the same mid-wave infrared cutoff tunability as conventional Ga-free InAs/InAsSb type-II superlattices, but with an additional degree of design freedom to enable optimization of absorption and transport properties. Time-resolved photoluminescence measurements of InGaAs/InAsSb superlattice characterization- and doped device structures are reported from 77 to 300 K and compared to InAs/InAsSb. The low-injection photoluminescence decay yields the minority carrier lifetime, which is analyzed with a recombination rate model, enabling the determination of the temperature-dependent Shockley–Read–Hall, radiative, and Auger recombination lifetimes and extraction of defect energy levels and capture cross section defect concentration products. The Shockley–Read–Hall-limited lifetime of undoped InGaAs/InAsSb is marginally reduced from 2.3 to 1.4 μs due to the inclusion of Ga; however, given that Ga improves the vertical hole mobility by a factor of >10×, a diffusion-limited InGaAs/InAsSb superlattice nBn could expect a lower bound of 2.5× improvement in diffusion length with significant impact on photodetector quantum efficiency and radiation hardness. At temperatures below 120 K, the doped device structures are Shockley–Read–Hall limited at 0.5 μs, which shows promise for detector applications.

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Research Organization:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE; Air Force Research Laboratory (AFRL)

Grant/Contract Number:: AC04-94AL85000; NA0003525

OSTI ID:: 1810399

Report Number(s):: SAND-2021-5669J; 697278; TRN: US2213039

Journal Information:: Journal of Applied Physics, Vol. 129, Issue 18; ISSN 0021-8979

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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