Accumulation-Type Ohmic van der Waals Contacts to Nearly Intrinsic WSe2 Nanosheet-Based Channels: Implications for Field-Effect Transistors

Andrews, Kraig; Rijal, Upendra; Bowman, Arthur; Chuang, Hsun-Jen; Koehler, Michael R.; Yan, Jiaqiang; Mandrus, David G.; Chen, Pai-Yen; Zhou, Zhixian

doi:10.1021/acsanm.1c01138

Title: Accumulation-Type Ohmic van der Waals Contacts to Nearly Intrinsic WSe₂ Nanosheet-Based Channels: Implications for Field-Effect Transistors

Journal Article · Mon May 17 00:00:00 EDT 2021 · ACS Applied Nano Materials

DOI:https://doi.org/10.1021/acsanm.1c01138· OSTI ID:1807195

Andrews, Kraig ^[1]; Rijal, Upendra ^[1]; Bowman, Arthur ^[1]; Chuang, Hsun-Jen ^[1]; Koehler, Michael R. ^[2];

^[3];

^[3]; Chen, Pai-Yen ^[4];

^[1]

Wayne State Univ., Detroit, MI (United States)
Univ. of Tennessee, Knoxville, TN (United States)
Univ. of Tennessee, Knoxville, TN (United States); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Univ. of Illinois, Chicago, IL (United States)

We report the fabrication of ohmic van der Waals (vdW) contacts to nearly intrinsic WSe₂ nanosheet-based channels in field-effect transistors (FETs) using degenerately p-doped MoS2 (p⁺-MoS2) as a contact metal. We demonstrate that accumulation-type ohmic contacts and the high device performance are achievable without electrostatically gating the drain/source contact regions despite the nearly intrinsic nature of WSe₂. Back-gated WSe₂ FETs with p⁺-MoS₂ bottom contacts (which screen the back-gate electric field in the drain/source regions) exhibit linear output characteristics, a high on/off ratio of 10⁸, and a high two-terminal field-effect mobility up to ~200 cm2 V^–1 s^–1 at room temperature. Our theoretical modeling reveals that the p⁺-MoS₂/WSe₂ vdW junction behaves like a metal/semiconductor ohmic contact signified by a vanishingly thin space-charge region of ~1 nm on the p⁺-MoS₂ side and a substantial accumulation layer of free holes on the WSe₂ side, which is further verified by additional temperature-dependent and dual-gated measurements of WSe₂ FETs. We attribute the formation of accumulation-type ohmic contacts free of a Schottky barrier to the near absence of Fermi-level pinning at the vdW interface and the work function of p⁺-MoS₂ being larger than the ionization energy of WSe₂. This study represents an important step toward achieving low-resistance ohmic contacts to two-dimensional (2D) semiconductors by eliminating the Fermi-level pinning effects, which is expected to have significant implications for next-generation 2D semiconductor-based nanoelectronics.

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Research Organization:: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: AC05-00OR22725

OSTI ID:: 1807195

Journal Information:: ACS Applied Nano Materials, Vol. 4, Issue 5; ISSN 2574-0970

Publisher:: American Chemical Society (ACS)Copyright Statement

Country of Publication:: United States

Language:: English

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36 MATERIALS SCIENCE
electronic properties
interfaces
metals
semiconductors
doping
degenerately doped
MoS2
WSe2
two-dimensional
field-effect transistor
Schottky barrier
Fermi-level pinning
ohmic contact

Title: Accumulation-Type Ohmic van der Waals Contacts to Nearly Intrinsic WSe2 Nanosheet-Based Channels: Implications for Field-Effect Transistors

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Title: Accumulation-Type Ohmic van der Waals Contacts to Nearly Intrinsic WSe₂ Nanosheet-Based Channels: Implications for Field-Effect Transistors