Optimal carrier concentration for FeSb2 colossal thermopower
- Brookhaven National Lab. (BNL), Upton, NY (United States); Stony Brook Univ., NY (United States)
Crystals of FeSb2 correlated narrow-gap semiconductor host colossal thermopower values. By tuning the impurity level here, we demonstrate that electron-phonon scattering that transfers phonon momentum to electrons is efficient only for certain optimal carrier concentration in the low-mobility band. Phonon drag acting on such states in crystals with high phonon mean free path enhances thermopower to colossal values, whereas for different carrier concentration, dominant thermal transport mechanism is electronic diffusion. This highlights the dual nature of correlated in-gap states that take part in the phonon drag but also reduce phonon mean free path.
- Research Organization:
- Brookhaven National Laboratory (BNL), Upton, NY (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- Grant/Contract Number:
- SC0012704
- OSTI ID:
- 1805264
- Alternate ID(s):
- OSTI ID: 1786855
- Report Number(s):
- BNL-221725-2021-JAAM; TRN: US2212731
- Journal Information:
- Applied Physics Letters, Vol. 118, Issue 23; ISSN 0003-6951
- Publisher:
- American Institute of Physics (AIP)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
Similar Records
Colossal phonon drag enhanced thermopower in lightly doped diamond
Vacancy defect control of colossal thermopower in FeSb2
Suppression of thermal conductivity and electronic correlations in Fe1–xRuxSb2 (0 ≤ x ≤ 0.6)
Journal Article
·
Thu Jun 02 00:00:00 EDT 2022
· Materials Today Physics
·
OSTI ID:1805264
+1 more
Vacancy defect control of colossal thermopower in FeSb2
Journal Article
·
Fri Feb 12 00:00:00 EST 2021
· npj Quantum Materials
·
OSTI ID:1805264
+10 more
Suppression of thermal conductivity and electronic correlations in Fe1–xRuxSb2 (0 ≤ x ≤ 0.6)
Journal Article
·
Tue Apr 27 00:00:00 EDT 2021
· Applied Physics Letters
·
OSTI ID:1805264
+1 more