Mixed-strategy approach to band-edge analysis and modeling in semiconductors

Canul, Amrah; Thapa, Dinesh; Huso, Jesse; Bergman, Leah; Vaughan Williams, Richard; Machleidt, Ruprecht

doi:10.1103/physrevb.101.195308

Title: Mixed-strategy approach to band-edge analysis and modeling in semiconductors

Journal Article · Wed May 20 00:00:00 EDT 2020 · Physical Review B

DOI:https://doi.org/10.1103/physrevb.101.195308· OSTI ID:1800464

^[1]; Thapa, Dinesh ^[1];

^[1];

^[1]; Vaughan Williams, Richard ^[1];

^[1]

Univ. of Idaho, Moscow, ID (United States)

In semiconductor physics, the Urbach rule describes an exponential dependence of the UV-Vis absorption coefficient on photon energy at the band edge. The rule is so ubiquitously applied that a single common mechanism, variability in the local potential, is generally considered to be the cause of exponential band edges. Variability in the local potential may be caused by alloy inhomogeneity, structural defects, impurities, thermal excitation, or any other mechanism that interrupts ideal crystallinity and creates disorder. A crucial point of the Urbach rule is its development for band edges which approach linearity when plotted on a logarithmic scale. The rule was not developed in the context of nonlinear band edges with complex fine structure. Even so, this model has been applied extensively to band edges with such features. Using differential analysis and deconvolution, we develop an analytical technique capable of separating the components responsible for the fine structure observed. This approach reduces challenging signal-artifact convolution problems to a simple linear combination. Furthermore, we develop a model that can be applied to the nonlinear band-edge signals extracted. In this work, we show that in the limiting case of linearity, our model is consistent with and produces the same results as the linear Urbach model. Our model is capable of bypassing “tailing” as an indirect measure of the spread in the local potential and gives a direct measure of this quantity.

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Research Organization:: Washington State Univ., Pullman, WA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division

Grant/Contract Number:: FG02-07ER46386

OSTI ID:: 1800464

Journal Information:: Physical Review B, Vol. 101, Issue 19; ISSN 2469-9950

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

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