Nanoscale dynamics during self-organized ion beam patterning of Si. II. Kr + bombardment

Myint, Peco; Ludwig, Karl F.; Wiegart, Lutz; Zhang, Yugang; Fluerasu, Andrei; Zhang, Xiaozhi; Headrick, Randall L.

doi:10.1103/physrevb.103.195424

Title: Nanoscale dynamics during self-organized ion beam patterning of Si. II. ${Kr}^{+}$ bombardment

Journal Article · Thu May 20 00:00:00 EDT 2021 · Physical Review B

DOI:https://doi.org/10.1103/physrevb.103.195424· OSTI ID:1797366

^[1]; Ludwig, Karl F. ^[1]; Wiegart, Lutz ^[2]; Zhang, Yugang ^[2]; Fluerasu, Andrei ^[2];

^[3]; Headrick, Randall L. ^[3]

Boston Univ., MA (United States)
Brookhaven National Lab. (BNL), Upton, NY (United States). National Synchrotron Light Source II (NSLS-II)
Univ. of Vermont, Burlington, VT (United States)

Understanding the self-organized ion beam nanopatterning of elemental semiconductors, particularly silicon, is of intrinsic scientific and technological interest. This is the second component of a two-part coherent x-ray scattering and x-ray photon correlation spectroscopy (XPCS) investigation of the kinetics and fluctuation dynamics of nanoscale ripple development on silicon during 1 keV Ar+ (part I) and Kr+ bombardment at 65 degrees polar angle. Here it is found that the ion-enhanced viscous flow relaxation is essentially equal for Kr+-induced patterning as previously found for Ar+ patterning despite the difference in ion masses. However, the magnitude of the surface curvature-dependent roughening rate in the early-stage kinetics is larger for Kr+ than for Ar+, consistent with expectations that the heavier ion gives an increased mass redistributive contribution to the initial surface instability. As with the Ar+ case, fluctuation dynamics in the late stage show a peak in correlation times at the length scale corresponding to the dominant structural feature on the surface-the ripples. Finally, it is shown that speckle motion during the surface evolution can be analyzed to determine spatial inhomogeneities in erosion rate and ripple velocity. This allows the direction and speed of ripple motion to be measured in a real time experiment. In the present case, ripple motion is found to be into the projected direction of the ion source, in contrast to expectations from an existing sputter erosion driven model with parameters derived from binary collision approximation simulations.

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Research Organization:: Brookhaven National Lab. (BNL), Upton, NY (United States); Argonne National Lab. (ANL), Argonne, IL (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: SC0012704; AC02-06CH11357

OSTI ID:: 1797366

Alternate ID(s):: OSTI ID: 1798483; OSTI ID: 1833387

Report Number(s):: BNL-221680-2021-JAAM; BNL-221681-2021-JAAM; TRN: US2212338

Journal Information:: Physical Review B, Vol. 103, Issue 19; ISSN 2469-9950

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

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