Low-Temperature 2D/2D Ohmic Contacts in WSe2 Field-Effect Transistors as a Platform for the 2D Metal–Insulator Transition

Stanley, Lily J.; Chuang, Hsun-Jen; Zhou, Zhixian; Koehler, Michael R.; Yan, Jiaqiang; Mandrus, David G.; Popović, Dragana

doi:10.1021/acsami.0c21440

Title: Low-Temperature 2D/2D Ohmic Contacts in WSe₂ Field-Effect Transistors as a Platform for the 2D Metal–Insulator Transition

Journal Article · Mon Feb 22 00:00:00 EST 2021 · ACS Applied Materials and Interfaces

DOI:https://doi.org/10.1021/acsami.0c21440· OSTI ID:1788158

^[1]; Chuang, Hsun-Jen ^[2];

^[2]; Koehler, Michael R. ^[3];

^[4];

^[1]

Florida State Univ., Tallahassee, FL (United States). National High Magnetic Field Lab. (MagLab)
Wayne State Univ., Detroit, MI (United States)
Univ. of Tennessee, Knoxville, TN (United States)
Univ. of Tennessee, Knoxville, TN (United States); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

We report the fabrication of hexagonal-boron-nitride (hBN) encapsulated multiterminal WSe2 Hall bars with 2D/2D low-temperature Ohmic contacts as a platform for investigating the two-dimensional (2D) metal–insulator transition. We demonstrate that the WSe2 devices exhibit Ohmic behavior down to 0.25 K and at low enough excitation voltages to avoid current-heating effects. Additionally, the high-quality hBN-encapsulated WSe2 devices in ideal Hall-bar geometry enable us to accurately determine the carrier density. Measurements of the temperature (T) and density (ns) dependence of the conductivity σ(T, ns) demonstrate scaling behavior consistent with a metal–insulator quantum phase transition driven by electron–electron interactions but where disorder-induced local magnetic moments are also present. Our findings pave the way for further studies of the fundamental quantum mechanical properties of 2D transition metal dichalcogenides using the same contact engineering.

View Accepted Manuscript (DOE)

Cite

Export

Save

Research Organization:: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division; National Science Foundation (NSF)

Grant/Contract Number:: 1707785; 2004445; 1644779; 1307075; AC05-00OR22725

OSTI ID:: 1788158

Alternate ID(s):: OSTI ID: 1807196

Journal Information:: ACS Applied Materials and Interfaces, Vol. 13, Issue 8; ISSN 1944-8244

Publisher:: American Chemical Society (ACS)Copyright Statement

Country of Publication:: United States

Language:: English

References (63)

Universal low-temperature Ohmic contacts for quantum transport in transition metal dichalcogenides Xu, Shuigang; Wu, Zefei; Lu, Huanhuan 2D Materials, Vol. 3, Issue 2 https://doi.org/10.1088/2053-1583/3/2/021007	journal	April 2016
Effects of a Parallel Magnetic Field on the Metal-Insulator Transition in a Dilute Two-Dimensional Electron System Eng, Kevin; Feng, X. G.; Popović, Dragana Physical Review Letters, Vol. 88, Issue 13 https://doi.org/10.1103/PhysRevLett.88.136402	journal	March 2002
Hall and field-effect mobilities in few layered p-WSe2 field-effect transistors Pradhan, N. R.; Rhodes, D.; Memaran, S. Scientific Reports, Vol. 5, Issue 1 https://doi.org/10.1038/srep08979	journal	March 2015
MoS ₂ Transistors Fabricated via Plasma-Assisted Nanoprinting of Few-Layer MoS ₂ Flakes into Large-Area Arrays Nam, Hongsuk; Wi, Sungjin; Rokni, Hossein ACS Nano, Vol. 7, Issue 7 https://doi.org/10.1021/nn401093u	journal	June 2013
Air-Stable Surface Charge Transfer Doping of MoS ₂ by Benzyl Viologen Kiriya, Daisuke; Tosun, Mahmut; Zhao, Peida Journal of the American Chemical Society, Vol. 136, Issue 22 https://doi.org/10.1021/ja5033327	journal	May 2014
The Anderson-Mott transition Belitz, D.; Kirkpatrick, T. R. Reviews of Modern Physics, Vol. 66, Issue 2 https://doi.org/10.1103/RevModPhys.66.261	journal	April 1994
Quantum critical scaling for finite-temperature Mott-like metal-insulator crossover in few-layered ${MoS}_{2}$ Moon, Byoung Hee; Han, Gang Hee; Radonjić, Miloš M. Physical Review B, Vol. 102, Issue 24 https://doi.org/10.1103/PhysRevB.102.245424	journal	December 2020
Switching Mechanism in Single-Layer Molybdenum Disulfide Transistors: An Insight into Current Flow across Schottky Barriers Liu, Han; Si, Mengwei; Deng, Yexin ACS Nano, Vol. 8, Issue 1 https://doi.org/10.1021/nn405916t	journal	December 2013
Intrinsic Electronic Transport Properties of High-Quality Monolayer and Bilayer MoS ₂ Baugher, Britton W. H.; Churchill, Hugh O. H.; Yang, Yafang Nano Letters, Vol. 13, Issue 9 https://doi.org/10.1021/nl401916s	journal	August 2013
Substitutional Electron and Hole Doping of ${WSe}_{2}$ : Synthesis, Electrical Characterization, and Observation of Band-to-Band Tunneling Mukherjee, R.; Chuang, H. J.; Koehler, M. R. Physical Review Applied, Vol. 7, Issue 3 https://doi.org/10.1103/PhysRevApplied.7.034011	journal	March 2017
Metallic behavior and related phenomena in two dimensions Abrahams, Elihu; Kravchenko, Sergey V.; Sarachik, Myriam P. Reviews of Modern Physics, Vol. 73, Issue 2 https://doi.org/10.1103/RevModPhys.73.251	journal	March 2001
Anisotropic photocurrent response at black phosphorus–MoS ₂ p–n heterojunctions Hong, Tu; Chamlagain, Bhim; Wang, Tianjiao Nanoscale, Vol. 7, Issue 44 https://doi.org/10.1039/C5NR03400K	journal	January 2015
Onset of Glassy Dynamics in a Two-Dimensional Electron System in Silicon Bogdanovich, Snežana; Popović, Dragana Physical Review Letters, Vol. 88, Issue 23 https://doi.org/10.1103/PhysRevLett.88.236401	journal	May 2002
Doping against the Native Propensity of MoS ₂ : Degenerate Hole Doping by Cation Substitution Suh, Joonki; Park, Tae-Eon; Lin, Der-Yuh Nano Letters, Vol. 14, Issue 12 https://doi.org/10.1021/nl503251h	journal	November 2014
WSe₂ field effect transistors with enhanced ambipolar characteristics Das, Saptarshi; Appenzeller, Joerg Applied Physics Letters, Vol. 103, Issue 10, Article No. 103501 https://doi.org/10.1063/1.4820408	journal	September 2013
Shubnikov–de Haas Oscillations of High-Mobility Holes in Monolayer and Bilayer ${WSe}_{2}$ : Landau Level Degeneracy, Effective Mass, and Negative Compressibility Fallahazad, Babak; Movva, Hema C. P.; Kim, Kyounghwan Physical Review Letters, Vol. 116, Issue 8 https://doi.org/10.1103/PhysRevLett.116.086601	journal	February 2016
Mobility engineering and a metal–insulator transition in monolayer MoS2 Radisavljevic, Branimir; Kis, Andras Nature Materials, Vol. 12, Issue 9 https://doi.org/10.1038/nmat3687	journal	June 2013
Low-Resistance 2D/2D Ohmic Contacts: A Universal Approach to High-Performance WSe ₂ , MoS ₂ , and MoSe ₂ Transistors Chuang, Hsun-Jen; Chamlagain, Bhim; Koehler, Michael Nano Letters, Vol. 16, Issue 3 https://doi.org/10.1021/acs.nanolett.5b05066	journal	February 2016
Degenerate n-Doping of Few-Layer Transition Metal Dichalcogenides by Potassium Fang, Hui; Tosun, Mahmut; Seol, Gyungseon Nano Letters, Vol. 13, Issue 5, p. 1991-1995 https://doi.org/10.1021/nl400044m	journal	April 2013
Phase patterning for ohmic homojunction contact in MoTe2 Cho, S.; Kim, S.; Kim, J. H. Science, Vol. 349, Issue 6248 https://doi.org/10.1126/science.aab3175	journal	August 2015
Transferred via contacts as a platform for ideal two-dimensional transistors Jung, Younghun; Choi, Min Sup; Nipane, Ankur Nature Electronics, Vol. 2, Issue 5 https://doi.org/10.1038/s41928-019-0245-y	journal	May 2019
Metal–insulator transition in two-dimensional electron systems Kravchenko, S. V.; Sarachik, M. P. Reports on Progress in Physics, Vol. 67, Issue 1 https://doi.org/10.1088/0034-4885/67/1/R01	journal	December 2003
Soft Coulomb gap and asymmetric scaling towards metal-insulator quantum criticality in multilayer MoS2 Moon, Byoung Hee; Bae, Jung Jun; Joo, Min-Kyu Nature Communications, Vol. 9, Issue 1 https://doi.org/10.1038/s41467-018-04474-4	journal	May 2018
Effect of Local Magnetic Moments on the Metallic Behavior in Two Dimensions Feng, X. G.; Popović, Dragana; Washburn, S. Physical Review Letters, Vol. 83, Issue 2 https://doi.org/10.1103/PhysRevLett.83.368	journal	July 1999
Colloquium : Transport in strongly correlated two dimensional electron fluids Spivak, B.; Kravchenko, S. V.; Kivelson, S. A. Reviews of Modern Physics, Vol. 82, Issue 2 https://doi.org/10.1103/RevModPhys.82.1743	journal	May 2010
Immunity to Contact Scaling in MoS ₂ Transistors Using in Situ Edge Contacts Cheng, Zhihui; Yu, Yifei; Singh, Shreya Nano Letters, Vol. 19, Issue 8 https://doi.org/10.1021/acs.nanolett.9b01355	journal	July 2019
Flexible and Transparent MoS ₂ Field-Effect Transistors on Hexagonal Boron Nitride-Graphene Heterostructures Lee, Gwan-Hyoung; Yu, Young-Jun; Cui, Xu ACS Nano, Vol. 7, Issue 9 https://doi.org/10.1021/nn402954e	journal	August 2013
One-Dimensional Edge Contacts to a Monolayer Semiconductor Jain, Achint; Szabó, Áron; Parzefall, Markus Nano Letters, Vol. 19, Issue 10 https://doi.org/10.1021/acs.nanolett.9b02166	journal	September 2019
High-Performance WSe ₂ Phototransistors with 2D/2D Ohmic Contacts Wang, Tianjiao; Andrews, Kraig; Bowman, Arthur Nano Letters, Vol. 18, Issue 5 https://doi.org/10.1021/acs.nanolett.7b04205	journal	April 2018
Mobility Improvement and Temperature Dependence in MoSe ₂ Field-Effect Transistors on Parylene-C Substrate Chamlagain, Bhim; Li, Qing; Ghimire, Nirmal Jeevi ACS Nano, Vol. 8, Issue 5 https://doi.org/10.1021/nn501150r	journal	April 2014
Metal-Insulator Transition in a 2D Electron Gas: Equivalence of Two Approaches for Determining the Critical Point Shashkin, A. A.; Kravchenko, S. V.; Klapwijk, T. M. Physical Review Letters, Vol. 87, Issue 26 https://doi.org/10.1103/PhysRevLett.87.266402	journal	December 2001
High Mobility WSe ₂ p - and n - Type Field-Effect Transistors Contacted by Highly Doped Graphene for Low-Resistance Contacts Chuang, Hsun-Jen; Tan, Xuebin; Ghimire, Nirmal Jeevi Nano Letters, Vol. 14, Issue 6 https://doi.org/10.1021/nl501275p	journal	May 2014
Patterning metal contacts on monolayer MoS2 with vanishing Schottky barriers using thermal nanolithography Zheng, Xiaorui; Calò, Annalisa; Albisetti, Edoardo Nature Electronics, Vol. 2, Issue 1 https://doi.org/10.1038/s41928-018-0191-0	journal	January 2019
Alloyed 2D Metal–Semiconductor Atomic Layer Junctions Kim, Ah Ra; Kim, Yonghun; Nam, Jaewook Nano Letters, Vol. 16, Issue 3 https://doi.org/10.1021/acs.nanolett.5b05036	journal	February 2016
Metal to Insulator Quantum-Phase Transition in Few-Layered ReS ₂ Pradhan, Nihar R.; McCreary, Amber; Rhodes, Daniel Nano Letters, Vol. 15, Issue 12 https://doi.org/10.1021/acs.nanolett.5b04100	journal	November 2015
Electrical contacts to two-dimensional semiconductors Allain, Adrien; Kang, Jiahao; Banerjee, Kaustav Nature Materials, Vol. 14, Issue 12 https://doi.org/10.1038/nmat4452	journal	November 2015
All Two-Dimensional, Flexible, Transparent, and Thinnest Thin Film Transistor Das, Saptarshi; Gulotty, Richard; Sumant, Anirudha V. Nano Letters, Vol. 14, Issue 5 https://doi.org/10.1021/nl5009037	journal	April 2014
Universal Behavior of the Resistance Noise across the Metal-Insulator Transition in Silicon Inversion Layers Jaroszyński, J.; Popović, Dragana; Klapwijk, T. M. Physical Review Letters, Vol. 89, Issue 27 https://doi.org/10.1103/PhysRevLett.89.276401	journal	December 2002
MoS ₂ P-type Transistors and Diodes Enabled by High Work Function MoO _x Contacts Chuang, Steven; Battaglia, Corsin; Azcatl, Angelica Nano Letters, Vol. 14, Issue 3 https://doi.org/10.1021/nl4043505	journal	February 2014
Multi-terminal transport measurements of MoS2 using a van der Waals heterostructure device platform Cui, Xu; Lee, Gwan-Hyoung; Kim, Young Duck Nature Nanotechnology, Vol. 10, Issue 6 https://doi.org/10.1038/nnano.2015.70	journal	April 2015
Phonon-limited mobility in $n$ -type single-layer MoS $_{2}$ from first principles Kaasbjerg, Kristen; Thygesen, Kristian S.; Jacobsen, Karsten W. Physical Review B, Vol. 85, Issue 11 https://doi.org/10.1103/PhysRevB.85.115317	journal	March 2012
Improved Contacts and Device Performance in MoS ₂ Transistors Using a 2D Semiconductor Interlayer Andrews, Kraig; Bowman, Arthur; Rijal, Upendra ACS Nano, Vol. 14, Issue 5 https://doi.org/10.1021/acsnano.0c02303	journal	April 2020
Chloride Molecular Doping Technique on 2D Materials: WS ₂ and MoS ₂ Yang, Lingming; Majumdar, Kausik; Liu, Han Nano Letters, Vol. 14, Issue 11 https://doi.org/10.1021/nl502603d	journal	October 2014
Field-Effect Transistors Built from All Two-Dimensional Material Components Roy, Tania; Tosun, Mahmut; Kang, Jeong Seuk ACS Nano, Vol. 8, Issue 6 https://doi.org/10.1021/nn501723y	journal	May 2014
Transport Properties of Monolayer MoS ₂ Grown by Chemical Vapor Deposition Schmidt, Hennrik; Wang, Shunfeng; Chu, Leiqiang Nano Letters, Vol. 14, Issue 4 https://doi.org/10.1021/nl4046922	journal	March 2014
Mobility Deception in Nanoscale Transistors: An Untold Contact Story Nasr, Joseph R.; Schulman, Daniel S.; Sebastian, Amritanand Advanced Materials, Vol. 31, Issue 2 https://doi.org/10.1002/adma.201806020	journal	November 2018
Electronic properties of two-dimensional systems Ando, Tsuneya; Fowler, Alan B.; Stern, Frank Reviews of Modern Physics, Vol. 54, Issue 2 https://doi.org/10.1103/RevModPhys.54.437	journal	April 1982
Improved Contacts to MoS ₂ Transistors by Ultra-High Vacuum Metal Deposition English, Chris D.; Shine, Gautam; Dorgan, Vincent E. Nano Letters, Vol. 16, Issue 6 https://doi.org/10.1021/acs.nanolett.6b01309	journal	May 2016
Metal-Insulator Transition in Two Dimensions: Effects of Disorder and Magnetic Field Popović, Dragana; Fowler, A. B.; Washburn, S. Physical Review Letters, Vol. 79, Issue 8 https://doi.org/10.1103/PhysRevLett.79.1543	journal	August 1997
Phase-engineered low-resistance contacts for ultrathin MoS₂ transistors Kappera, Rajesh; Voiry, Damien; Yalcin, Sibel Ebru Nature Materials, Vol. 13, Issue 12, p. 1128-1134 https://doi.org/10.1038/nmat4080	journal	August 2014
Approaching the Schottky–Mott limit in van der Waals metal–semiconductor junctions Liu, Yuan; Guo, Jian; Zhu, Enbo Nature, Vol. 557, Issue 7707 https://doi.org/10.1038/s41586-018-0129-8	journal	May 2018
Low-temperature p-type ohmic contact to WSe ₂ using p ⁺ -MoS ₂ /WSe ₂ van der Waals interface Takeyama, Kei; Moriya, Rai; Watanabe, Kenji Applied Physics Letters, Vol. 117, Issue 15 https://doi.org/10.1063/5.0016468	journal	October 2020
Black phosphorus field-effect transistors Li, Likai; Yu, Yijun; Ye, Guo Jun Nature Nanotechnology, Vol. 9, Issue 5 https://doi.org/10.1038/nnano.2014.35	journal	March 2014
High-Mobility Holes in Dual-Gated WSe ₂ Field-Effect Transistors Movva, Hema C. P.; Rai, Amritesh; Kang, Sangwoo ACS Nano, Vol. 9, Issue 10 https://doi.org/10.1021/acsnano.5b04611	journal	September 2015
High-Performance Single Layered WSe₂ p-FETs with Chemically Doped Contacts Fang, Hui; Chuang, Steven; Chang, Ting Chia Nano Letters, Vol. 12, Issue 7, p. 3788-3792 https://doi.org/10.1021/nl301702r	journal	June 2012
High Performance Multilayer MoS₂Transistors with Scandium Contacts Das, Saptarshi; Chen, Hong-Yan; Penumatcha, Ashish Verma Nano Letters, Vol. 13, Issue 1, p. 100-105 https://doi.org/10.1021/nl303583v	journal	December 2012
Metal-Insulator Transition at $B = 0$ in a Dilute Two Dimensional GaAs-AlGaAs Hole Gas Simmons, M. Y.; Hamilton, A. R.; Pepper, M. Physical Review Letters, Vol. 80, Issue 6 https://doi.org/10.1103/PhysRevLett.80.1292	journal	February 1998
Critical Behavior of a Strongly Disordered 2D Electron System: The Cases of Long-Range and Screened Coulomb Interactions Lin, Ping V.; Popović, Dragana Physical Review Letters, Vol. 114, Issue 16 https://doi.org/10.1103/PhysRevLett.114.166401	journal	April 2015
Role of Metal Contacts in Designing High-Performance Monolayer n-Type WSe ₂ Field Effect Transistors Liu, Wei; Kang, Jiahao; Sarkar, Deblina Nano Letters, Vol. 13, Issue 5 https://doi.org/10.1021/nl304777e	journal	April 2013
Zero-magnetic-field collective insulator phase in a dilute 2D electron system Pudalov, V. M.; D’Iorio, M.; Kravchenko, S. V. Physical Review Letters, Vol. 70, Issue 12 https://doi.org/10.1103/PhysRevLett.70.1866	journal	March 1993
Novel Metallic Behavior in Two Dimensions Feng, X. G.; Popović, Dragana; Washburn, S. Physical Review Letters, Vol. 86, Issue 12 https://doi.org/10.1103/PhysRevLett.86.2625	journal	March 2001
Erratum: Onset of Glassy Dynamics in a Two-Dimensional Electron System in Silicon [Phys. Rev. Lett.88, 236401 (2002)] Bogdanovich, Snežana; Popović, Dragana Physical Review Letters, Vol. 89, Issue 28 https://doi.org/10.1103/physrevlett.89.289904	journal	December 2002
Magnetic-Field Dependence of the Anomalous Noise Behavior in a Two-Dimensional Electron System in Silicon Jaroszyński, J.; Popović, Dragana; Klapwijk, T. M. Physical Review Letters, Vol. 92, Issue 22 https://doi.org/10.1103/physrevlett.92.226403	journal	June 2004

Similar Records

Low-resistance 2D/2D ohmic contacts: A universal approach to high-performance WSe₂, MoS₂, and MoSe₂ transistors

Journal Article · Thu Feb 04 00:00:00 EST 2016 · Nano Letters · OSTI ID:1788158

Chuang, Hsun -Jen; Chamlagain, Bhim; Koehler, Michael; +5 more

Quantum Transport in 2D Semiconductors

Technical Report · Fri Dec 15 00:00:00 EST 2023 · OSTI ID:1788158

Hone, James; Dean, Cory

Accumulation-Type Ohmic van der Waals Contacts to Nearly Intrinsic WSe₂ Nanosheet-Based Channels: Implications for Field-Effect Transistors

Journal Article · Mon May 17 00:00:00 EDT 2021 · ACS Applied Nano Materials · OSTI ID:1788158

Andrews, Kraig; Rijal, Upendra; Bowman, Arthur; +6 more

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
transition metal dichalcogenides
tungsten diselenide
field-effect transistor
contact resistance
2D materials
metal-insulator transition

Title: Low-Temperature 2D/2D Ohmic Contacts in WSe2 Field-Effect Transistors as a Platform for the 2D Metal–Insulator Transition

Citation Formats

References (63)

Similar Records

Related Subjects

Title: Low-Temperature 2D/2D Ohmic Contacts in WSe₂ Field-Effect Transistors as a Platform for the 2D Metal–Insulator Transition