Direct Optoelectronic Imaging of 2D Semiconductor–3D Metal Buried Interfaces

Jo, Kiyoung; Kumar, Pawan; Orr, Joseph; Anantharaman, Surendra B.; Miao, Jinshui; Motala, Michael J.; Bandyopadhyay, Arkamita; Kisslinger, Kim; Muratore, Christopher; Shenoy, Vivek B.; Stach, Eric A.; Glavin, Nicholas R.; Jariwala, Deep

doi:10.1021/acsnano.1c00708

Title: Direct Optoelectronic Imaging of 2D Semiconductor–3D Metal Buried Interfaces

Journal Article · Mon Mar 08 00:00:00 EST 2021 · ACS Nano

DOI:https://doi.org/10.1021/acsnano.1c00708· OSTI ID:1785940

^[1];

^[1]; Orr, Joseph ^[2]; Anantharaman, Surendra B. ^[1]; Miao, Jinshui ^[1]; Motala, Michael J. ^[3];

^[1]; Kisslinger, Kim ^[4];

^[5]; Shenoy, Vivek B. ^[1];

^[1];

^[6];

^[1]

Univ. of Pennsylvania, Philadelphia, PA (United States)
Villanova Univ., PA (United States)
Air Force Research Lab. (AFRL), Wright-Patterson AFB, OH (United States); UES Inc., Beavercreek, OH (United States)
Brookhaven National Lab. (BNL), Upton, NY (United States)
Univ. of Dayton, OH (United States)
Air Force Research Lab. (AFRL), Wright-Patterson AFB, OH (United States)

The semiconductor-metal junction is one of the most critical factors for high performance electronic devices. In two-dimensional (2D) semiconductor devices, minimizing voltage drop at this junction is of particularly challenging and important. Despite numerous studies on contact resistance in 2D semiconductors, the exact nature of the buried interface under a 3D metal remains elusive and unclear. Herein, we report the direct observation of 2D semiconductor-metal buried interface using recently developed metal-assisted transfer technique to expose the buried interface which is then directly investigated using scanning probe techniques. We characterize the spatially varying electronic and optical properties of this buried interface with < 20 nm resolution. To be specific, potential, conductance and photoluminescence at the buried metal/MoS₂ interface are correlated under variety of metal deposition conditions as well as type of metal contacts. We observe that direct evaporation of Au on MoS₂ induces large strain of ~5% in the MoS₂ which coupled with charge transfer leads to degenerate doping of the MoS₂ underneath the contact. These factors lead to improvement of contact resistance to record values of 138 kΩ μm measured using local conductance probes. This approach was adopted to investigate MoS₂-In/Au alloy interface, which records lowest contact resistance of 63 kΩ μm. Overall, our results highlight that the MoS₂/Metal interface is very sensitive to method of contact making and provides a universal strategy to characterize buried contact interfaces involving 2D semiconductors.

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Research Organization:: Brookhaven National Laboratory (BNL), Upton, NY (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES); US Air Force Office of Scientific Research (AFOSR); US Army Research Office (ARO); National Science Foundation (NSF); Swiss National Science Foundation (SNSF)

Grant/Contract Number:: SC0012704; FA9550-21-1-003; W911NF-19-1-010; FA2386-20-1-4074; DMR-1905853; DMR-1720530; NNCI-1542153; 187977; FA9550-19RYCOR050

OSTI ID:: 1785940

Report Number(s):: BNL-221562-2021-JAAM

Journal Information:: ACS Nano, Vol. 15, Issue 3; ISSN 1936-0851

Publisher:: American Chemical Society (ACS)Copyright Statement

Country of Publication:: United States

Language:: English

References (68)

Fermi-level pinning and charge neutrality level in germanium Dimoulas, A.; Tsipas, P.; Sotiropoulos, A. Applied Physics Letters, Vol. 89, Issue 25 https://doi.org/10.1063/1.2410241	journal	December 2006
Photoreflectance study of the surface Fermi level at (001) n ‐ and p ‐type GaAs surfaces Yin, X.; Chen, H‐M.; Pollak, F. H. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 10, Issue 1 https://doi.org/10.1116/1.578125	journal	January 1992
Determination of the Fermi-level pinning position at Si(111) surfaces Himpsel, F. J.; Hollinger, G.; Pollak, R. A. Physical Review B, Vol. 28, Issue 12 https://doi.org/10.1103/PhysRevB.28.7014	journal	December 1983
Van der Waals Materials for Atomically-Thin Photovoltaics: Promise and Outlook Jariwala, Deep; Davoyan, Artur R.; Wong, Joeson ACS Photonics, Vol. 4, Issue 12 https://doi.org/10.1021/acsphotonics.7b01103	journal	November 2017
Emerging photonic architectures in two-dimensional opto-electronics Brar, Victor W.; Sherrott, Michelle C.; Jariwala, Deep Chemical Society Reviews, Vol. 47, Issue 17 https://doi.org/10.1039/C8CS00206A	journal	January 2018
Electrical contacts to two-dimensional semiconductors Allain, Adrien; Kang, Jiahao; Banerjee, Kaustav Nature Materials, Vol. 14, Issue 12 https://doi.org/10.1038/nmat4452	journal	November 2015
Contacts between Two- and Three-Dimensional Materials: Ohmic, Schottky, and p – n Heterojunctions Xu, Yang; Cheng, Cheng; Du, Sichao ACS Nano, Vol. 10, Issue 5 https://doi.org/10.1021/acsnano.6b01842	journal	May 2016
Contact engineering for 2D materials and devices Schulman, Daniel S.; Arnold, Andrew J.; Das, Saptarshi Chemical Society Reviews, Vol. 47, Issue 9 https://doi.org/10.1039/C7CS00828G	journal	January 2018
Improved Contacts to MoS ₂ Transistors by Ultra-High Vacuum Metal Deposition English, Chris D.; Shine, Gautam; Dorgan, Vincent E. Nano Letters, Vol. 16, Issue 6 https://doi.org/10.1021/acs.nanolett.6b01309	journal	May 2016
Approaching the Schottky–Mott limit in van der Waals metal–semiconductor junctions Liu, Yuan; Guo, Jian; Zhu, Enbo Nature, Vol. 557, Issue 7707 https://doi.org/10.1038/s41586-018-0129-8	journal	May 2018
Van der Waals contacts between three-dimensional metals and two-dimensional semiconductors Wang, Yan; Kim, Jong Chan; Wu, Ryan J. Nature, Vol. 568, Issue 7750 https://doi.org/10.1038/s41586-019-1052-3	journal	March 2019
The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets Chhowalla, Manish; Shin, Hyeon Suk; Eda, Goki Nature Chemistry, Vol. 5, Issue 4, p. 263-275 https://doi.org/10.1038/nchem.1589	journal	April 2013
Phase-engineered low-resistance contacts for ultrathin MoS₂ transistors Kappera, Rajesh; Voiry, Damien; Yalcin, Sibel Ebru Nature Materials, Vol. 13, Issue 12, p. 1128-1134 https://doi.org/10.1038/nmat4080	journal	August 2014
Covalent functionalization of monolayered transition metal dichalcogenides by phase engineering Voiry, Damien; Goswami, Anandarup; Kappera, Rajesh Nature Chemistry, Vol. 7, Issue 1 https://doi.org/10.1038/nchem.2108	journal	November 2014
Phase patterning for ohmic homojunction contact in MoTe2 Cho, S.; Kim, S.; Kim, J. H. Science, Vol. 349, Issue 6248 https://doi.org/10.1126/science.aab3175	journal	August 2015
Atomic mechanism of the semiconducting-to-metallic phase transition in single-layered MoS2 Lin, Yung-Chang; Dumcenco, Dumitru O.; Huang, Ying-Sheng Nature Nanotechnology, Vol. 9, Issue 5 https://doi.org/10.1038/nnano.2014.64	journal	April 2014
Uncovering the Effects of Metal Contacts on Monolayer MoS ₂ Schauble, Kirstin; Zakhidov, Dante; Yalon, Eilam ACS Nano, Vol. 14, Issue 11 https://doi.org/10.1021/acsnano.0c03515	journal	September 2020
Probing Evolution of Local Strain at MoS ₂ -Metal Boundaries by Surface-Enhanced Raman Scattering Moe, Yan Aung; Sun, Yinghui; Ye, Huanyu ACS Applied Materials & Interfaces, Vol. 10, Issue 46 https://doi.org/10.1021/acsami.8b13241	journal	October 2018
Nano-optical imaging and spectroscopy of order, phases, and domains in complex solids Atkin, Joanna M.; Berweger, Samuel; Jones, Andrew C. Advances in Physics, Vol. 61, Issue 6 https://doi.org/10.1080/00018732.2012.737982	journal	December 2012
Nanoscale Heterogeneities in Monolayer MoSe ₂ Revealed by Correlated Scanning Probe Microscopy and Tip-Enhanced Raman Spectroscopy Smithe, Kirby K. H.; Krayev, Andrey V.; Bailey, Connor S. ACS Applied Nano Materials, Vol. 1, Issue 2 https://doi.org/10.1021/acsanm.7b00083	journal	January 2018
Hybrid Tip-Enhanced Nanospectroscopy and Nanoimaging of Monolayer WSe ₂ with Local Strain Control Park, Kyoung-Duck; Khatib, Omar; Kravtsov, Vasily Nano Letters, Vol. 16, Issue 4 https://doi.org/10.1021/acs.nanolett.6b00238	journal	March 2016
Dry Transfer of van der Waals Crystals to Noble Metal Surfaces To Enable Characterization of Buried Interfaces Krayev, Andrey; Bailey, Connor S.; Jo, Kiyoung ACS Applied Materials & Interfaces, Vol. 11, Issue 41 https://doi.org/10.1021/acsami.9b09798	journal	September 2019
A new insight for ohmic contacts to MoS ₂ : by tuning MoS ₂ affinity energies but not metal work-functions Wang, Qian; Deng, Bei; Shi, Xingqiang Physical Chemistry Chemical Physics, Vol. 19, Issue 38 https://doi.org/10.1039/C7CP05109C	journal	January 2017
Atomically Thin ${MoS}_{2}$ A New Direct-Gap Semiconductor Mak, Kin Fai; Lee, Changgu; Hone, James Physical Review Letters, Vol. 105, Issue 13, Article No.136805 https://doi.org/10.1103/PhysRevLett.105.136805	journal	September 2010
Emerging Photoluminescence in Monolayer MoS₂ Splendiani, Andrea; Sun, Liang; Zhang, Yuanbo Nano Letters, Vol. 10, Issue 4, p. 1271-1275 https://doi.org/10.1021/nl903868w	journal	April 2010
Photonic crystallization of two-dimensional MoS ₂ for stretchable photodetectors Kim, Richard Hahnkee; Leem, Juyoung; Muratore, Christopher Nanoscale, Vol. 11, Issue 28 https://doi.org/10.1039/C9NR02173F	journal	January 2019
Highly Localized Strain in a MoS ₂ /Au Heterostructure Revealed by Tip-Enhanced Raman Spectroscopy Rahaman, Mahfujur; Rodriguez, Raul D.; Plechinger, Gerd Nano Letters, Vol. 17, Issue 10 https://doi.org/10.1021/acs.nanolett.7b02322	journal	September 2017
Giant gap-plasmon tip-enhanced Raman scattering of MoS ₂ monolayers on Au nanocluster arrays Milekhin, Alexander G.; Rahaman, Mahfujur; Rodyakina, Ekaterina E. Nanoscale, Vol. 10, Issue 6 https://doi.org/10.1039/C7NR06640F	journal	January 2018
Shape-Uniform, High-Quality Monolayered MoS ₂ Crystals for Gate-Tunable Photoluminescence Zhang, Xiumei; Nan, Haiyan; Xiao, Shaoqing ACS Applied Materials & Interfaces, Vol. 9, Issue 48 https://doi.org/10.1021/acsami.7b14189	journal	November 2017
Control of Plasmon Emission and Dynamics at the Transition from Classical to Quantum Coupling Kravtsov, Vasily; Berweger, Samuel; Atkin, Joanna M. Nano Letters, Vol. 14, Issue 9 https://doi.org/10.1021/nl502297t	journal	August 2014
Improving resolution in quantum subnanometre-gap tip-enhanced Raman nanoimaging Zhang, Yingchao; Voronine, Dmitri V.; Qiu, Shangran Scientific Reports, Vol. 6, Issue 1 https://doi.org/10.1038/srep25788	journal	May 2016
Symmetry-dependent phonon renormalization in monolayer MoS $_{2}$ transistor Chakraborty, Biswanath; Bera, Achintya; Muthu, D. V. S. Physical Review B, Vol. 85, Issue 16 https://doi.org/10.1103/PhysRevB.85.161403	journal	April 2012
Gate-Tunable Resonant Raman Spectroscopy of Bilayer MoS ₂ Lu, Xin; Utama, M. I. B.; Wang, Xingzhi Small, Vol. 13, Issue 35 https://doi.org/10.1002/smll.201701039	journal	June 2017
Probing Local Strain at MX ₂ –Metal Boundaries with Surface Plasmon-Enhanced Raman Scattering Sun, Yinghui; Liu, Kai; Hong, Xiaoping Nano Letters, Vol. 14, Issue 9 https://doi.org/10.1021/nl5023767	journal	August 2014
Mastering high resolution tip-enhanced Raman spectroscopy: towards a shift of perception Richard-Lacroix, Marie; Zhang, Yao; Dong, Zhenchao Chemical Society Reviews, Vol. 46, Issue 13 https://doi.org/10.1039/C7CS00203C	journal	January 2017
Quantum mechanical effects in plasmonic structures with subnanometre gaps Zhu, Wenqi; Esteban, Ruben; Borisov, Andrei G. Nature Communications, Vol. 7, Issue 1 https://doi.org/10.1038/ncomms11495	journal	June 2016
Plasmonic Gradient Effects on High Vacuum Tip-Enhanced Raman Spectroscopy Sun, Mengtao; Zhang, Zhenglong; Chen, Li Advanced Optical Materials, Vol. 2, Issue 1 https://doi.org/10.1002/adom.201300296	journal	November 2013
Optical Origin of Subnanometer Resolution in Tip-Enhanced Raman Mapping Zhang, Chao; Chen, Bao-Qin; Li, Zhi-Yuan The Journal of Physical Chemistry C, Vol. 119, Issue 21 https://doi.org/10.1021/acs.jpcc.5b02653	journal	May 2015
Molecular cavity optomechanics as a theory of plasmon-enhanced Raman scattering Roelli, Philippe; Galland, Christophe; Piro, Nicolas Nature Nanotechnology, Vol. 11, Issue 2 https://doi.org/10.1038/nnano.2015.264	journal	November 2015
Quantum Mechanical Description of Raman Scattering from Molecules in Plasmonic Cavities Schmidt, Mikolaj K.; Esteban, Ruben; González-Tudela, Alejandro ACS Nano, Vol. 10, Issue 6 https://doi.org/10.1021/acsnano.6b02484	journal	May 2016
Direct Experimental Evidence of Hot Carrier-Driven Chemical Processes in Tip-Enhanced Raman Spectroscopy (TERS) Wang, Rui; Li, Jingbai; Rigor, Joel The Journal of Physical Chemistry C, Vol. 124, Issue 3 https://doi.org/10.1021/acs.jpcc.9b12002	journal	December 2019
A Closer Look at Corrugated Au Tips Bhattarai, Ashish; Crampton, Kevin T.; Joly, Alan G. The Journal of Physical Chemistry Letters, Vol. 11, Issue 5 https://doi.org/10.1021/acs.jpclett.0c00305	journal	February 2020
Suppressing Molecular Charging, Nanochemistry, and Optical Rectification in the Tip-Enhanced Raman Geometry Wang, Chih-Feng; O’Callahan, Brian T.; Kurouski, Dmitry The Journal of Physical Chemistry Letters, Vol. 11, Issue 15 https://doi.org/10.1021/acs.jpclett.0c01413	journal	July 2020
Plasmon–phonon coupling in monolayer WS ₂ Zhao, Weiwei; Wu, Qisheng; Hao, Qi Applied Physics Letters, Vol. 108, Issue 13 https://doi.org/10.1063/1.4944948	journal	March 2016
Bandgap Engineering of Strained Monolayer and Bilayer MoS₂ Conley, Hiram J.; Wang, Bin; Ziegler, Jed I. Nano Letters, Vol. 13, Issue 8, p. 3626-3630 https://doi.org/10.1021/nl4014748	journal	July 2013
The disorder-induced Raman scattering in Au/MoS ₂ heterostructures Gołasa, K.; Grzeszczyk, M.; Binder, J. AIP Advances, Vol. 5, Issue 7 https://doi.org/10.1063/1.4926670	journal	July 2015
Gram-Scale Aqueous Synthesis of Stable Few-Layered 1T-MoS ₂ : Applications for Visible-Light-Driven Photocatalytic Hydrogen Evolution Liu, Qin; Li, Xiuling; He, Qun Small, Vol. 11, Issue 41 https://doi.org/10.1002/smll.201501822	journal	August 2015
Pure and stable metallic phase molybdenum disulfide nanosheets for hydrogen evolution reaction Geng, Xiumei; Sun, Weiwei; Wu, Wei Nature Communications, Vol. 7, Issue 1 https://doi.org/10.1038/ncomms10672	journal	February 2016
Work function variation of MoS ₂ atomic layers grown with chemical vapor deposition: The effects of thickness and the adsorption of water/oxygen molecules Kim, Jong Hun; Lee, Jinhwan; Kim, Jae Hyeon Applied Physics Letters, Vol. 106, Issue 25 https://doi.org/10.1063/1.4923202	journal	June 2015
Designing Electrical Contacts to ${MoS}_{2}$ Monolayers: A Computational Study Popov, Igor; Seifert, Gotthard; Tománek, David Physical Review Letters, Vol. 108, Issue 15 https://doi.org/10.1103/PhysRevLett.108.156802	journal	April 2012
Band-like transport in high mobility unencapsulated single-layer MoS ₂ transistors Jariwala, Deep; Sangwan, Vinod K.; Late, Dattatray J. Applied Physics Letters, Vol. 102, Issue 17 https://doi.org/10.1063/1.4803920	journal	April 2013
Recommended values of clean metal surface work functions Derry, Gregory N.; Kern, Megan E.; Worth, Eli H. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 33, Issue 6 https://doi.org/10.1116/1.4934685	journal	November 2015
Layer dependence of the electronic band alignment of few-layer $Mo S_{2}$ on $Si O_{2}$ measured using photoemission electron microscopy Berg, Morgann; Keyshar, Kunttal; Bilgin, Ismail Physical Review B, Vol. 95, Issue 23 https://doi.org/10.1103/PhysRevB.95.235406	journal	June 2017
Tunable phase stability and contact resistance of monolayer transition metal dichalcogenides contacts with metal Ouyang, Bin; Xiong, Shiyun; Jing, Yuhang npj 2D Materials and Applications, Vol. 2, Issue 1 https://doi.org/10.1038/s41699-018-0059-1	journal	May 2018
Controlling the Schottky barrier at ${MoS}_{2}$ /metal contacts by inserting a BN monolayer Farmanbar, Mojtaba; Brocks, Geert Physical Review B, Vol. 91, Issue 16 https://doi.org/10.1103/PhysRevB.91.161304	journal	April 2015
Low-Temperature Ohmic Contact to Monolayer MoS ₂ by van der Waals Bonded Co/ h -BN Electrodes Cui, Xu; Shih, En-Min; Jauregui, Luis A. Nano Letters, Vol. 17, Issue 8 https://doi.org/10.1021/acs.nanolett.7b01536	journal	July 2017
Ohmic Contacts to 2D Semiconductors through van der Waals Bonding Farmanbar, Mojtaba; Brocks, Geert Advanced Electronic Materials, Vol. 2, Issue 4 https://doi.org/10.1002/aelm.201500405	journal	February 2016
Band alignment of two-dimensional h-BN/MoS2 van der Waals heterojunction measured by X-ray photoelectron spectroscopy Xing, Shu’an; Zhao, Guijuan; Wang, Jie Journal of Alloys and Compounds, Vol. 834 https://doi.org/10.1016/j.jallcom.2020.155108	journal	September 2020
Origins of genuine Ohmic van der Waals contact between indium and MoS2 Kim, Bum-Kyu; Kim, Tae-Hyung; Choi, Dong-Hwan npj 2D Materials and Applications, Vol. 5, Issue 1 https://doi.org/10.1038/s41699-020-00191-z	journal	January 2021
The work function of the elements and its periodicity Michaelson, Herbert B. Journal of Applied Physics, Vol. 48, Issue 11 https://doi.org/10.1063/1.323539	journal	November 1977
Mechanically modulated tunneling resistance in monolayer MoS ₂ Fu, Deyi; Zhou, Jian; Tongay, Sefaattin Applied Physics Letters, Vol. 103, Issue 18 https://doi.org/10.1063/1.4827301	journal	October 2013
Stretching and Breaking of Ultrathin MoS ₂ Bertolazzi, Simone; Brivio, Jacopo; Kis, Andras ACS Nano, Vol. 5, Issue 12 https://doi.org/10.1021/nn203879f	journal	November 2011
Nanoindentation measurements of the mechanical properties of polycrystalline Au and Ag thin films on silicon substrates: Effects of grain size and film thickness Cao, Yifang; Allameh, Seyed; Nankivil, Derek Materials Science and Engineering: A, Vol. 427, Issue 1-2 https://doi.org/10.1016/j.msea.2006.04.080	journal	July 2006
Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set Kresse, G.; Furthmüller, J. Physical Review B, Vol. 54, Issue 16, p. 11169-11186 https://doi.org/10.1103/PhysRevB.54.11169	journal	October 1996
Fully unconstrained noncollinear magnetism within the projector augmented-wave method Hobbs, D.; Kresse, G.; Hafner, J. Physical Review B, Vol. 62, Issue 17 https://doi.org/10.1103/PhysRevB.62.11556	journal	November 2000
From ultrasoft pseudopotentials to the projector augmented-wave method Kresse, G.; Joubert, D. Physical Review B, Vol. 59, Issue 3, p. 1758-1775 https://doi.org/10.1103/PhysRevB.59.1758	journal	January 1999
Generalized Gradient Approximation Made Simple Perdew, John P.; Burke, Kieron; Ernzerhof, Matthias Physical Review Letters, Vol. 77, Issue 18, p. 3865-3868 https://doi.org/10.1103/PhysRevLett.77.3865	journal	October 1996
Ohmic contacts to 2D semiconductors through van der Waals bonding Farmanbar, M.; Brocks, G. arXiv https://doi.org/10.48550/arxiv.1601.02163	text	January 2016

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77 NANOSCIENCE AND NANOTECHNOLOGY
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Title: Direct Optoelectronic Imaging of 2D Semiconductor–3D Metal Buried Interfaces

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