Influence of dislocations and twin walls in BaTiO3 on the voltage-controlled switching of perpendicular magnetization

Goiriena-Goikoetxea, M.; Xiao, Z.; El-Ghazaly, A.; Stan, C. V.; Chatterjee, J.; Ceballos, A.; Pattabi, A.; Tamura, N.; Lo Conte, R.; Hellman, F.; Candler, R.; Bokor, J.

doi:10.1103/physrevmaterials.5.024401

Title: Influence of dislocations and twin walls in BaTiO₃ on the voltage-controlled switching of perpendicular magnetization

Journal Article · Mon Feb 01 00:00:00 EST 2021 · Physical Review Materials

DOI:https://doi.org/10.1103/physrevmaterials.5.024401· OSTI ID:1769071

^[1]; Xiao, Z. ^[2]; El-Ghazaly, A. ^[3]; Stan, C. V. ^[4]; Chatterjee, J. ^[3]; Ceballos, A. ^[5]; Pattabi, A. ^[3]; Tamura, N. ^[6]; Lo Conte, R. ^[3]; Hellman, F. ^[5];

^[7];

^[5]

Univ. of California, Berkeley, CA (United States); Leioa (Spain)
Univ. of California, Los Angeles, CA (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Advanced Light Source (ALS)
Univ. of California, Berkeley, CA (United States)
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Advanced Light Source (ALS); Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
Univ. of California, Berkeley, CA (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Advanced Light Source (ALS)
Univ. of California, Los Angeles, CA (United States); California NanoSystems Inst., Los Angeles, CA (United States)

In this work, we investigate the influence of dislocations and twin walls in BaTiO₃ on its ferroelectric response and the resulting effect on the perpendicular magnetic anisotropy (PMA) of a strain-coupled [Co\Ni]_n film. A dense twinned structure in conjunction with a high dislocation density significantly reduces the converse piezoelectric effect of BaTiO₃ by hindering the propagation of newly nucleated domains with an applied electric field. This, in turn, results in a modest reduction of the PMA of the ferromagnetic layer. On the other hand, the ferroelectric polarization reorients from [100] to [001] direction in a dislocation-free BaTiO₃, inducing the maximum achievable in-plane compressive strain of 1.1%. A large fraction of this uniaxial strain is transferred to the magnetoelastically coupled ferromagnetic layers whose magnetization switches to in plane via the inverse magnetostriction effect. This work reveals the critical role of the interplay between twin walls and dislocations within a ferroelectric substrate in the performance of multiferroic heterostructures and provides insight into the development of highly energy-efficient magnetoelectric devices.

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Research Organization:: Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA); USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division; National Science Foundation (NSF)

Grant/Contract Number:: AC52-07NA27344; EEC-1160504; AC02-05CH11231

OSTI ID:: 1769071

Alternate ID(s):: OSTI ID: 1788014

Report Number(s):: LLNL-JRNL-815418; 1023013; TRN: US2207198

Journal Information:: Physical Review Materials, Vol. 5, Issue 2; ISSN 2475-9953

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

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Title: Influence of dislocations and twin walls in BaTiO3 on the voltage-controlled switching of perpendicular magnetization

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Title: Influence of dislocations and twin walls in BaTiO₃ on the voltage-controlled switching of perpendicular magnetization