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Title: H- Ion Source Development for the FNAL 750keV Injector Upgrade

Conference · · AIP Conf.Proc.
DOI:https://doi.org/10.1063/1.4792799· OSTI ID:1764041

The new FNAL 750keV injector upgrade for the replacement of the 40 year old Fermi National Laboratory (FNAL) Cockcroft-Walton accelerators with a new ion source and 200MHz Radio Frequency Quadrupole (RFQ), Low Energy Beam Transport (LEBT) and Medium Energy Beam Transport (MEBT) [1], has been built and is now being tested prior to installation during the 2012 shutdown. The new H-' ion source is a round aperture magnetron which was developed at Brookhaven National Lab (BNL) by Jim Alessi[2]. Operational experience from BNL has shown that this type of source is more reliable with a longer lifetime (on the order of 6 to 9 months) due to better power efficiency. With a similar duty factor to BNL, we expect to have a comparable lifetime between source changes. The new source design reliably produces 90mA of H-' beam current at 15Hz rep-rate, 250mus pulse width, and a duty factor of 0.38%A The measured emittances at the end of the LEBT are horizontally H = 0.21I mm- mrad and vertically V = 0.17I mm- mrad. With 35kV extraction the power efficiency is 60mA/kW. The source design, along with data from a test stand and the LEBT, will be presented in this paper.

Research Organization:
Fermi National Accelerator Lab. (FNAL), Batavia, IL (United States)
Sponsoring Organization:
USDOE Office of Science (SC), High Energy Physics (HEP)
DOE Contract Number:
AC02-07CH11359
OSTI ID:
1764041
Report Number(s):
FERMILAB-CONF-12-476-AD; oai:inspirehep.net:1184683
Journal Information:
AIP Conf.Proc., Vol. 1515, Issue 1
Country of Publication:
United States
Language:
English

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