Light-Enhanced Ion Migration in Two-Dimensional Perovskite Single Crystals Revealed in Carbon Nanotubes/Two-Dimensional Perovskite Heterostructure and Its Photomemory Application
- Institute of Microelectronics, Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing 100084, China
- Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Key Laboratory for the Physics and Chemistry of Nanodevices and College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China
- School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China
- Material Science Division, Lawrence Berkeley National Laboratory, Berkeley, California, United States
Two-dimensional (2D) hybrid perovskite sandwiched between two long-chain organic layers is an emerging class of low-cost semiconductor materials with unique optical properties and improved moisture stability. Unlike conventional semiconductors, ion migration in perovskite is a unique phenomenon possibly responsible for long carrier lifetime, current-voltage hysteresis, and low-frequency giant dielectric response. While there are many studies of ion migration in bulk hybrid perovskite, not much is known for its 2D counterparts, especially for ion migration induced by light excitation. Here, we construct an exfoliated 2D perovskite/carbon nanotube (CNT) heterostructure field effect transistor (FET), not only to demonstrate its potential in photomemory applications, but also to study the light induced ion migration mechanisms. We show that the FET I-V characteristic curve can be regulated by light and shows two opposite trends under different CNT oxygen doping conditions. Our temperature-dependent study indicates that the change in the I-V curve is probably caused by ion redistribution in the 2D hybrid perovskite. The first principle calculation shows the reduction of the migration barrier of I vacancy under light excitation. The device simulation shows that the increase of 2D hybrid perovskite dielectric constant (enabled by the increased ion migration) can change the I-V curve in the trends observed experimentally. Finally, the so synthesized FET shows the multilevel photomemory function. Our work shows that not only we could understand the unique ion migration behavior in 2D hybrid perovskite, it might also be used for many future memory function related applications not realizable in traditional semiconductors.
- Research Organization:
- Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division; National Key Research and Development Program of China; National Natural Science Foundation of China (NSFC); National Basic Research Program of China; Shenzhen Science and Technology Program
- Grant/Contract Number:
- AC02-05CH11231; 2016YFA0200400; 61434001; 61574083; 61874065; 51861145202; 2015CB352101; 4184091; JCYJ20150831192224146
- OSTI ID:
- 1760184
- Journal Information:
- ACS Central Science, Vol. 5, Issue 11; ISSN 2374-7943
- Publisher:
- American Chemical Society (ACS)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
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