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Title: In situ TEM study of crystallization and chemical changes in an oxidized uncapped Ge2Sb2Te5 film

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/5.0023761· OSTI ID:1735998
ORCiD logo [1]; ORCiD logo [1]; ORCiD logo [2]; ORCiD logo [3]; ORCiD logo [4]; ORCiD logo [5]; ORCiD logo [6]; ORCiD logo [1]; ORCiD logo [7]
  1. Univ. of Connecticut, Storrs, CT (United States)
  2. Gatan Inc., Pleasanton, CA (United States)
  3. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
  4. Univ. of Connecticut, Storrs, CT (United States); Pacific Northwest National Lab. (PNNL), Richland, WA (United States)
  5. Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
  6. Univ. of Manchester (United Kingdom)
  7. Univ. of Connecticut, Storrs, CT (United States); Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Research Organization:
Pacific Northwest National Laboratory (PNNL), Richland, WA (United States); Los Alamos National Laboratory (LANL), Los Alamos, NM (United States); Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE Office of Science (SC); USDOE National Nuclear Security Administration (NNSA); National Science Foundation (NSF)
Grant/Contract Number:
AC05-76RL01830; NA-0003525; 89233218CNA000001; DMR-1710468; AC04-94AL85000
OSTI ID:
1735998
Alternate ID(s):
OSTI ID: 1766999; OSTI ID: 1782581
Report Number(s):
PNNL-SA-156726; LA-UR-20-26510; SAND-2021-5332J; TRN: US2205487
Journal Information:
Journal of Applied Physics, Vol. 128, Issue 12; ISSN 0021-8979
Publisher:
American Institute of Physics (AIP)Copyright Statement
Country of Publication:
United States
Language:
English

References (30)

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High thermal stability and low density variation of carbon-doped Ge 2 Sb 2 Te 5 for phase-change memory application journal December 2014
Structures of stable and metastable Ge 2 Sb 2 Te 5 , an intermetallic compound in GeTe–Sb 2 Te 3 pseudobinary systems journal November 2004
Direct observation of partial disorder and zipperlike transition in crystalline phase change materials journal March 2019
Phase-change materials for rewriteable data storage journal November 2007
Investigation of the optical and electronic properties of Ge2Sb2Te5 phase change material in its amorphous, cubic, and hexagonal phases journal May 2005
Phase-Change Materials; the Challenges for TEM journal August 2018
Phase change behavior in oxygen-incorporated Ge2Sb2Te5 films journal July 2009
Low-field amorphous state resistance and threshold voltage drift in chalcogenide materials journal May 2004
Oxygen incorporation into GST phase-change memory matrix journal March 2015
In-situ transmission electron microscopy studies of the crystallization of N-doped Ge-rich GeSbTe materials journal August 2018
Liquid-solid phase transition of Ge-Sb-Te alloy observed by in-situ transmission electron microscopy journal July 2017
Novel /spl mu/trench phase-change memory cell for embedded and stand-alone non-volatile memory applications conference January 2004
Effects of surface oxidation on the crystallization characteristics of Ge-rich Ge-Sb-Te alloys thin films journal July 2020
Role of Oxygen on Chemical Segregation in Uncapped Ge 2 Sb 2 Te 5 Thin Films on Silicon Nitride journal May 2020
Direct atomic insight into the role of dopants in phase-change materials journal August 2019
In situ dynamic HR-TEM and EELS study on phase transitions of Ge2Sb2Te5 chalcogenides journal October 2008
Atomic-Scale Observation of Carbon Distribution in High-Performance Carbon-Doped Ge 2 Sb 2 Te 5 and Its Influence on Crystallization Behavior journal April 2019
Nanoscale nuclei in phase change materials: Origin of different crystallization mechanisms of Ge 2 Sb 2 Te 5 and AgInSbTe journal February 2014
Phase change materials: From material science to novel storage devices journal March 2007
In situ observation of the impact of surface oxidation on the crystallization mechanism of GeTe phase-change thin films by scanning transmission electron microscopy journal September 2017
Amorphous-fcc transition in Ge2Sb2Te5 journal March 2010
Microscopic origin of the fast crystallization ability of Ge–Sb–Te phase-change memory materials journal March 2008
Phase-change materials for non-volatile memory devices: from technological challenges to materials science issues journal December 2017
High speed, high temperature electrical characterization of phase change materials: metastable phases, crystallization dynamics, and resistance drift journal January 2015
Direct observation of structural transitions in the phase change material Ge 2 Sb 2 Te 5 journal January 2016
Crystallization dynamics of nitrogen-doped Ge2Sb2Te5 journal May 2009
In situ transmission electron microscopy study of the crystallization of Ge2Sb2Te5 journal February 2004