Direct formation of nitrogen-vacancy centers in nitrogen doped diamond along the trajectories of swift heavy ions

Lake, Russell E.; Persaud, Arun; Christian, Casey; Barnard, Edward S.; Chan, Emory M.; Bettiol, Andrew A.; Tomut, Marilena; Trautmann, Christina; Schenkel, Thomas

doi:10.1063/5.0036643

Title: Direct formation of nitrogen-vacancy centers in nitrogen doped diamond along the trajectories of swift heavy ions

Journal Article · Wed Feb 24 00:00:00 EST 2021 · Applied Physics Letters

DOI:https://doi.org/10.1063/5.0036643· OSTI ID:1735559

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Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Aalto Univ., Otaniemi (Finland)
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
National Univ. of Singapore (Singapore)
GSI-Helmholtz Centre for Heavy Ion Research, Darmstadt (Germany); Westfälische Wilhelms-Universität Münster (Germany)
GSI-Helmholtz Centre for Heavy Ion Research, Darmstadt (Germany); Darmstadt Univ. of Technology (Germany)

We report depth-resolved photoluminescence measurements of nitrogen-vacancy (NV−) centers formed along the tracks of swift heavy ions (SHIs) in type Ib synthetic single crystal diamonds that had been doped with 100 ppm nitrogen during crystal growth. Analysis of the spectra shows that NV− centers are formed preferentially within regions where electronic stopping processes dominate and not at the end of the ion range where elastic collisions lead to the formation of vacancies and defects. Thermal annealing further increases NV yields after irradiation with SHIs preferentially in regions with high vacancy densities. NV centers formed along the tracks of single swift heavy ions can be isolated with lift-out techniques for explorations of color center qubits in quasi-1D registers with an average qubit spacing of a few nanometers and of order 100 color centers per micrometer along 10 to 30-μm-long percolation chains.

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Research Organization:: Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Fusion Energy Sciences (FES); USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: AC02-05CH11231

OSTI ID:: 1735559

Alternate ID(s):: OSTI ID: 1767329

Journal Information:: Applied Physics Letters, Vol. 118, Issue 8; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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