Filament-Free Bulk Resistive Memory Enables Deterministic Analogue Switching

Li, Yiyang; Fuller, Elliot J.; Sugar, Joshua D.; Yoo, Sangmin; Ashby, David S.; Bennett, Christopher H.; Horton, Robert D.; Bartsch, Michael S.; Marinella, Matthew J.; Lu, Wei D.; Talin, A. Alec

doi:10.1002/adma.202003984

Title: Filament-Free Bulk Resistive Memory Enables Deterministic Analogue Switching

Journal Article · Tue Sep 22 00:00:00 EDT 2020 · Advanced Materials

DOI:https://doi.org/10.1002/adma.202003984· OSTI ID:1667424

^[1]; Fuller, Elliot J. ^[1]; Sugar, Joshua D. ^[1]; Yoo, Sangmin ^[2]; Ashby, David S. ^[1]; Bennett, Christopher H. ^[3]; Horton, Robert D. ^[1]; Bartsch, Michael S. ^[1]; Marinella, Matthew J. ^[3]; Lu, Wei D. ^[2]; Talin, A. Alec ^[1]

Sandia National Lab. (SNL-CA), Livermore, CA (United States)
Univ. of Michigan, Ann Arbor, MI (United States). Dept. of Electrical Engineering and Computer Science
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Abstract Digital computing is nearing its physical limits as computing needs and energy consumption rapidly increase. Analogue‐memory‐based neuromorphic computing can be orders of magnitude more energy efficient at data‐intensive tasks like deep neural networks, but has been limited by the inaccurate and unpredictable switching of analogue resistive memory. Filamentary resistive random access memory (RRAM) suffers from stochastic switching due to the random kinetic motion of discrete defects in the nanometer‐sized filament. In this work, this stochasticity is overcome by incorporating a solid electrolyte interlayer, in this case, yttria‐stabilized zirconia (YSZ), toward eliminating filaments. Filament‐free, bulk‐RRAM cells instead store analogue states using the bulk point defect concentration, yielding predictable switching because the statistical ensemble behavior of oxygen vacancy defects is deterministic even when individual defects are stochastic. Both experiments and modeling show bulk‐RRAM devices using TiO _2‐ _X switching layers and YSZ electrolytes yield deterministic and linear analogue switching for efficient inference and training. Bulk‐RRAM solves many outstanding issues with memristor unpredictability that have inhibited commercialization, and can, therefore, enable unprecedented new applications for energy‐efficient neuromorphic computing. Beyond RRAM, this work shows how harnessing bulk point defects in ionic materials can be used to engineer deterministic nanoelectronic materials and devices.

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Research Organization:: Sandia National Lab. (SNL-CA), Livermore, CA (United States); Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA)

Grant/Contract Number:: AC04-94AL85000; NA0003525; DE‐NA‐0003525

OSTI ID:: 1667424

Alternate ID(s):: OSTI ID: 1804234

Report Number(s):: SAND-2020-9164J; 690303

Journal Information:: Advanced Materials, Vol. 32, Issue 45; ISSN 0935-9648

Publisher:: WileyCopyright Statement

Country of Publication:: United States

Language:: English

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36 MATERIALS SCIENCE
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Title: Filament-Free Bulk Resistive Memory Enables Deterministic Analogue Switching

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