GaAs growth rates of 528 μm/h using dynamic-hydride vapor phase epitaxy with a nitrogen carrier gas

McClure, Elisabeth L.; Schulte, Kevin L.; Simon, John; Metaferia, Wondwosen; Ptak, Aaron J.

doi:10.1063/5.0002053

Title: GaAs growth rates of 528 μm/h using dynamic-hydride vapor phase epitaxy with a nitrogen carrier gas

Journal Article · Mon May 04 00:00:00 EDT 2020 · Applied Physics Letters

DOI:https://doi.org/10.1063/5.0002053· OSTI ID:1659831

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Rochester Institute of Technology, Rochester, New York 14623, USA;National Renewable Energy Laboratory, Golden, Colorado 80401, USA
National Renewable Energy Laboratory, Golden, Colorado 80401, USA

Herein we demonstrate record GaAs growth rates approaching 530 μm/h using nitrogen carrier gas and 400 μm/h using hydrogen carrier gas in a dynamic-hydride vapor phase epitaxy reactor. We measured root mean square surface roughness below 1 nm using a 1 μm × 1 μm atomic force microscopy scan for GaAs growth rates up to 483 μm/h using a nitrogen carrier gas and 400 μm/h using a hydrogen carrier gas. We performed computational fluid dynamics modeling to study the effect of the carrier gas choice on the thermal profile within the reactor and how that influences the degree of AsH₃ decomposition. The modeling suggests that the lower thermal conductivity of the nitrogen carrier gas minimizes the amount of AsH₃ that thermally decomposes before reaching the wafer surface and the heavier atomic mass decreases the likelihood that AsH₃ will reach the heated reactor walls, leading to a growth rate enhancement relative to the hydrogen carrier case in a hydride-enhanced growth regime.

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Research Organization:: National Renewable Energy Laboratory (NREL), Golden, CO (United States)

Sponsoring Organization:: USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office

Grant/Contract Number:: AC36-08GO28308

OSTI ID:: 1659831

Alternate ID(s):: OSTI ID: 1617088

Report Number(s):: NREL/JA-5900-75665; MainId:6422; UUID:72f3845e-3520-ea11-9c2a-ac162d87dfe5; MainAdminID:13454; TRN: US2203486

Journal Information:: Applied Physics Letters, Vol. 116, Issue 18; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 12 works

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References (18)

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Title: GaAs growth rates of 528 μm/h using dynamic-hydride vapor phase epitaxy with a nitrogen carrier gas

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