Monolayer Semiconductor Auger Detector

Chow, Colin Ming Earn; Yu, Hongyi; Schaibley, John; Rivera, Pasqual; Finney, Joseph; Yan, Jiaqiang; Mandrus, David; Taniguchi, Takashi; Wantanabe, Kenji; Yao, Wang; Cobden, David; Xu, Xiaodong

doi:10.1021/acs.nanolett.0c02190

Title: Monolayer Semiconductor Auger Detector

Journal Article · Tue Jun 09 00:00:00 EDT 2020 · Nano Letters (Online)

DOI:https://doi.org/10.1021/acs.nanolett.0c02190· OSTI ID:1657931

^[1]; Yu, Hongyi ^[2]; Schaibley, John ^[3];

^[1]; Finney, Joseph ^[1];

^[4]; Mandrus, David ^[5];

^[6];

^[6]; Yao, Wang ^[7]; Cobden, David ^[1];

^[1]

Univ. of Washington, Seattle, WA (United States)
Sun Yat-Sen Univ., Guangzhou (China); Univ. of Hong Kong (Hong Kong)
Univ. of Washington, Seattle, WA (United States); Univ. of Arizona, Tucson, AZ (United States)
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Univ. of Tennessee, Knoxville, TN (United States)
National Inst. for Materials Science (NIMS), Tsukuba (Japan)
Univ. of Hong Kong (Hong Kong)

Auger recombination in semiconductors is a many-body phenomenon in which the recombination of electrons and holes is accompanied by excitation of other charge carriers. The excess energy of the excited carriers is normally rapidly converted to heat, making Auger processes difficult to probe directly. In this paper, we employ a technique in which the Auger-excited carriers are detected by their ability to tunnel out of the semiconductor through a thin barrier, generating a current. We use vertical van der Waals heterostructures with monolayer WSe₂ as the semiconductor, with hexagonal boron nitride as the tunnel barrier, and a graphite collector electrode. The Auger processes combined with resonant absorption produce characteristic negative photoconductance. We detect holes Auger-excited by both neutral and charged excitons and find that the Auger scattering is surprisingly strong under weak excitation. Our work expands the range of techniques available for probing relaxation processes in 2D materials.

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Research Organization:: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division; US Air Force Office of Scientific Research (AFOSR); National Science Foundation (NSF); Research Grants Council of Hong Kong; Ministry of Education, Culture, Sports, Science and Technology (MEXT)

Grant/Contract Number:: AC05-00OR22725; FA9550-18-1-0104; 1741656; SC0018171; HKU17305914P; JPMJCR15F3

OSTI ID:: 1657931

Journal Information:: Nano Letters (Online), Vol. 20, Issue 7; ISSN 1530-6992

Publisher:: American Chemical SocietyCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 3 works

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References (31)

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van der Waals heterostructure
exciton-hole Auger scattering
tunneling barrier
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