Intentional carbon doping reveals CH as an abundant charged impurity in nominally undoped synthetic WS2 and WSe2

Cochrane, K. A.; Zhang, T.; Kozhakhmetov, A.; Lee, J-H; Zhang, F.; Dong, C.; Neaton, J. B.; Robinson, J. A.; Terrones, M.; Bargioni, A. Weber; Schuler, B.

doi:10.1088/2053-1583/ab8543

Title: Intentional carbon doping reveals CH as an abundant charged impurity in nominally undoped synthetic WS₂ and WSe₂

Journal Article · Thu May 07 00:00:00 EDT 2020 · 2D Materials

DOI:https://doi.org/10.1088/2053-1583/ab8543· OSTI ID:1657322

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Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Pennsylvania State Univ., University Park, PA (United States)
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Univ. of California, Berkeley, CA (United States)
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Univ. of California, Berkeley, CA (United States); Kavli Energy Nanosciences Institute at Berkeley, Berkeley, CA (United States)

Understanding the physical properties and controlling the generation of intrinsic and extrinsic defects is central to the technological adoption of 2D materials in devices. Here we identify a charged carbon-hydrogen complex at a chalcogen site (CH_X) as a common, charged impurity in synthetically grown transition metal dichalcogenides (TMDs). This conclusion is drawn by comparing high resolution scanning probe microscopy measurements of nominally undoped and intentionally carbon doped TMD samples. While CH impurity densities in undoped CVD-grown WS₂ and MOCVD-grown WSe₂ can range anywhere from parts per million to parts per thousand, CH densities in the percentage levels were selectively generated by a post-synthetic methane plasma treatment. Our study indicates that methane plasma treatment is a selective and clean method for the controlled introduction of a charged carbon-hydrogen complex at a surface chalcogen site, adefect that is commonly present in synthetic TMDs.

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Research Organization:: Energy Frontier Research Centers (EFRC) (United States). Center for Novel Pathways to Quantum Coherence in Materials (NPQC); Pennsylvania State Univ., University Park, PA (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES); Swiss National Science Foundation (SNSF); Intel; National Science Foundation (NSF); US Air Force Office of Scientific Research (AFOSR)

Grant/Contract Number:: SC0018025; AC02-05CH11231

OSTI ID:: 1657322

Alternate ID(s):: OSTI ID: 1756340

Journal Information:: 2D Materials, Vol. 7, Issue 3; ISSN 2053-1583

Publisher:: IOP PublishingCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 10 works

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Title: Intentional carbon doping reveals CH as an abundant charged impurity in nominally undoped synthetic WS2 and WSe2

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Title: Intentional carbon doping reveals CH as an abundant charged impurity in nominally undoped synthetic WS₂ and WSe₂