Hyperuniform and nearly hyperuniform random network materials
Patent
·
OSTI ID:1650937
This invention is in the field of physical chemistry and relates to novel hyperuniform and nearly hyperuniform random network materials and methods of making said materials. Methods are described for controlling or altering the band gap of a material, and in particular commercially useful materials such as amorphous silicon. These methods can be exploited in the design of semiconductors, transistors, diodes, solar cells and the like.
- Research Organization:
- Princeton Univ., NJ (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- FG02-04ER46108
- Assignee:
- The Trustees of Princeton University (Princeton, NJ)
- Patent Number(s):
- 10,662,065
- Application Number:
- 15/965,206
- OSTI ID:
- 1650937
- Resource Relation:
- Patent File Date: 04/27/2018
- Country of Publication:
- United States
- Language:
- English
Low temperature crystallization and pattering of amorphous silicon films
|
patent | September 1992 |
Highly solar-energy absorbing device and method of making the same
|
patent | February 1981 |
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