Role of Oxygen on Chemical Segregation in Uncapped Ge2Sb2Te5 Thin Films on Silicon Nitride

Tripathi, Shalini; Kotula, Paul; Singh, Manish Kumar; Ghosh, Chanchal; Bakan, Gokhan; Silva, Helena; Carter, C. Barry

doi:10.1149/2162-8777/ab9a19

Title: Role of Oxygen on Chemical Segregation in Uncapped Ge₂Sb₂Te₅ Thin Films on Silicon Nitride

Journal Article · Mon Jun 29 00:00:00 EDT 2020 · ECS Journal of Solid State Science and Technology

DOI:https://doi.org/10.1149/2162-8777/ab9a19· OSTI ID:1639084

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Univ. of Connecticut, Storrs, CT (United States)
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Materials Science & Engineering Center
Univ. of Manchester (United Kingdom). The National Graphene Inst.
Univ. of Connecticut, Storrs, CT (United States); Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Center for Integrated Nanotechnologies (CINT)

Germanium antimony telluride has been the most used and studied phase-change material for electronic memory due to its suitable crystallization temperature, amorphous to crystalline resistance contrast, and stability of the amorphous phase. In this paper, the segregation of Ge in a Ge₂Sb₂Te₅ film of 30 nm thickness during heating inside the transmission electron microscope was observed and characterized. Furthermore, Ge₂Sb₂Te₅ film was deposited using sputtering on a Protochips Fusion holder and left uncapped in atmosphere for about four months. Oxygen incorporated within the film played a significant role in the chemical segregation observed which resulted in amorphous Ge-O island boundaries and Sb and Te rich crystalline domains. Such composition changes can occur when the phase-change material interfaces insulating oxide layers in an integrated device and can significantly impact its electrical and thermal properties.

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Research Organization:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA); National Science Foundation (NSF)

Grant/Contract Number:: AC04-94AL85000; NA0003525; DMR-1710468

OSTI ID:: 1639084

Report Number(s):: SAND-2020-6701J; 687046

Journal Information:: ECS Journal of Solid State Science and Technology, Vol. 9, Issue 5; ISSN 2162-8769

Publisher:: Electrochemical SocietyCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 10 works

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References (21)

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