Evidence for trap-assisted Auger recombination in MBE grown InGaN quantum wells by electron emission spectroscopy
- Univ. of California, Santa Barbara, CA (United States)
- Vilnius Univ. (Lithuania)
- Ecole Polytechnique, Palaiseau Cedex (France)
- Univ. of California, Santa Barbara, CA (United States); Ecole Polytechnique, Palaiseau Cedex (France)
We report on the direct measurement of hot electrons generated in the active region of blue light-emitting diodes grown by ammonia molecular beam epitaxy by electron emission spectroscopy. The external quantum efficiency of these devices is <1% and does not droop; thus, the efficiency losses from the intrinsic, interband, electron-electron-hole, or electron-hole-hole Auger should not be a significant source of hot carriers. Here, the detection of hot electrons in this case suggests that an alternate hot electron generating process is occurring within these devices, likely a trap-assisted Auger recombination process.
- Research Organization:
- Univ. of California, Santa Barbara, CA (United States)
- Sponsoring Organization:
- USDOE Office of Energy Efficiency and Renewable Energy (EERE), Energy Efficiency Office. Building Technologies Office
- Contributing Organization:
- Ecole Polytechnique Paris Vilnius University
- Grant/Contract Number:
- EE0007096
- OSTI ID:
- 1635222
- Alternate ID(s):
- OSTI ID: 1602582
- Journal Information:
- Applied Physics Letters, Vol. 116, Issue 9; ISSN 0003-6951
- Publisher:
- American Institute of Physics (AIP)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
Cited by: 21 works
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