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Title: Evidence for trap-assisted Auger recombination in MBE grown InGaN quantum wells by electron emission spectroscopy

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.5125605· OSTI ID:1635222

We report on the direct measurement of hot electrons generated in the active region of blue light-emitting diodes grown by ammonia molecular beam epitaxy by electron emission spectroscopy. The external quantum efficiency of these devices is <1% and does not droop; thus, the efficiency losses from the intrinsic, interband, electron-electron-hole, or electron-hole-hole Auger should not be a significant source of hot carriers. Here, the detection of hot electrons in this case suggests that an alternate hot electron generating process is occurring within these devices, likely a trap-assisted Auger recombination process.

Research Organization:
Univ. of California, Santa Barbara, CA (United States)
Sponsoring Organization:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Energy Efficiency Office. Building Technologies Office
Contributing Organization:
Ecole Polytechnique Paris Vilnius University
Grant/Contract Number:
EE0007096
OSTI ID:
1635222
Alternate ID(s):
OSTI ID: 1602582
Journal Information:
Applied Physics Letters, Vol. 116, Issue 9; ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)Copyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 21 works
Citation information provided by
Web of Science

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