Neutron detection performance of gallium nitride based semiconductors

Journal Article · Tue Nov 26 00:00:00 EST 2019 · Scientific Reports

DOI:https://doi.org/10.1038/s41598-019-53664-7· OSTI ID:1624511

Zhou, Chuanle ^[1]; Melton, Andrew G. ^[2]; Burgett, Eric ^[3]; Hertel, Nolan ^[4]; Ferguson, Ian T. ^[5]

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1. Missouri Univ. of Science and Technology, Rolla, MO (United States). Dept. of Electrical and Computer Engineering
2. Univ. of North Carolina at Charlotte, NC (United States). Dept. of Electrical and Computer Engineering
3. Idaho State Univ., Pocatello, ID (United States). Nuclear Engineering Program
4. Georgia Inst. of Technology, Atlanta, GA (United States). Nuclear Engineering Program
5. Missouri Univ. of Science and Technology, Rolla, MO (United States). Dept. of Electrical and Computer Engineering; Kennesaw State University, Marietta, GA (United States). Southern Polytechnic College of Engineering and Engineering Technology

Neutron detection is crucial for particle physics experiments, nuclear power, space and international security. Solid state neutron detectors are of great interest due to their superior mechanical robustness, smaller size and lower voltage operation compared to gas detectors. Gallium nitride (GaN), a mature wide bandgap optoelectronic and electronic semiconductor, is attracting research interest for neutron detection due to its radiation hardness and thermal stability. This work investigated thermal neutron scintillation detectors composed of GaN thin films with and without conversion layers or rare-earth doping. Intrinsic GaN-based neutron scintillators are demonstrated via the intrinsic ¹⁴N(n, p) reaction, which has a small thermal neutron cross-section at low neutron energies, but is comparable to other reactions at high neutron energies (>1 MeV). Gamma discrimination is shown to be possible with pulse-height in intrinsic GaN-based scintillation detectors. Additionally, GaN-based scintillation detector with a ⁶LiF neutron conversion layer and Gd-doped GaN detector are compared with intrinsic GaN detectors. These results indicate GaN scintillator is a suitable candidate neutron detector in high-flux applications.

• Research Organization: Georgia Institute of Technology, Atlanta, GA (United States)
• Sponsoring Organization: USDOE Office of Nuclear Energy (NE)
• Grant/Contract Number: FG07-07ID14887
• OSTI ID: 1624511
• Journal Information: Scientific Reports, Vol. 9, Issue 1; ISSN 2045-2322
• Publisher: Nature Publishing Group
• Country of Publication: United States
• Language: English

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