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Title: Improved Efficiency and Stability of Pb/Sn Binary Perovskite Solar Cells Fabricated by Galvanic Displacement Reaction

Journal Article · · Advanced Energy Materials
ORCiD logo [1];  [2];  [3];  [4];  [1]
  1. Univ. of Washington, Seattle, WA (United States); City Univ. of Hong Kong, Kowloon (Hong Kong)
  2. Univ. of Washington, Seattle, WA (United States); Tsinghua Univ., Beijing (China). Key Lab. of Organic Optoelectronics and Molecular Engineering of Ministry of Education
  3. Univ. of Washington, Seattle, WA (United States); Nankai Univ., Tianjin (China). State Key Lab. and Inst. of Elemento-Organic Chemistry, Collaborative Innovation Center of Chemical Science and Engineering
  4. Tsinghua Univ., Beijing (China). Key Lab. of Organic Optoelectronics and Molecular Engineering

In this work, a simple and generally applicable method of fabricating efficient and stable Pb-Sn binary perovskite solar cells (PVSCs) based on a galvanic displacement reaction (GDR) is demonstrated. Different from the commonly used conventional approaches to form perovskite precursor solutions by mixing metal halides and organic halides such as PbI2, SnI2, MAI, FAI, etc., together, the precursor solutions are formulated by reacting pure Pb-based perovskite precursor solutions with fine Sn metal powders. After the ratios between Pb and Sn are optimized, high PCEs of 15.85% and 18.21% can be achieved for MAPb0.4Sn0.6I3 and (FAPb0.6Sn0.4I3)0.85(MAPb0.6Sn0.4Br3)0.15 based PVSCs, which are the highest PCEs among all values reported to date for Pb-Sn binary PVSCs. Moreover, the GDR perovskite-based PVSCs exhibit significantly improved ambient and thermal stability with encapsulation, which can retain more than 90% of their initial PCEs after being stored in ambient (relative humidity (RH) ≈50%) for 1000 h or being thermal annealed at 80 °C for more than 120 h in ambient conditions. These results demonstrate the advantage of using GDR to prepare tunable bandgap binary perovskites for devices with greatly improved performance and stability.

Research Organization:
Univ. of Washington, Seattle, WA (United States)
Sponsoring Organization:
USDOE Office of Energy Efficiency and Renewable Energy (EERE); US Office of Naval Research (ONR); US Air Force Office of Scientific Research (AFOSR); National Natural Science Foundation of China (NSFC)
Grant/Contract Number:
EE0006710; N00014-17-1-2260; FA2386-15-1-4106; 51273104; 91433205
OSTI ID:
1613369
Journal Information:
Advanced Energy Materials, Vol. 9, Issue 7; ISSN 1614-6832
Publisher:
WileyCopyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 51 works
Citation information provided by
Web of Science

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Pb‐Bi Binary Metal All‐Inorganic Absorber Layer for Stability Enhancement in Perovskite Solar Cells journal June 2019
Graded Bandgap Perovskite with Intrinsic n–p Homojunction Expands Photon Harvesting Range and Enables All Transport Layer‐Free Perovskite Solar Cells journal January 2020
Wide-bandgap, low-bandgap, and tandem perovskite solar cells journal July 2019