Growth and Isolation of Large Area Boron-Doped Nanocrystalline Diamond Sheets: A Route toward Diamond-on-Graphene Heterojunction

Bogdanowicz, R.; Ficek, M.; Sobaszek, M.; Nosek, A.; Gołuński, Ł.; Karczewski, J.; Jaramillo‐Botero, A.; Goddard, W. A.; Bockrath, M.; Ossowski, T.

doi:10.1002/adfm.201805242

Title: Growth and Isolation of Large Area Boron-Doped Nanocrystalline Diamond Sheets: A Route toward Diamond-on-Graphene Heterojunction

Journal Article · Thu Nov 22 00:00:00 EST 2018 · Advanced Functional Materials

DOI:https://doi.org/10.1002/adfm.201805242· OSTI ID:1612242

^[1]; Ficek, M. ^[1]; Sobaszek, M. ^[1]; Nosek, A. ^[2]; Gołuński, Ł. ^[1]; Karczewski, J. ^[1]; Jaramillo‐Botero, A. ^[2]; Goddard, W. A. ^[2]; Bockrath, M. ^[3]; Ossowski, T. ^[4]

Gdańsk University of Technology (Poland)
California Institute of Technology (CalTech), Pasadena, CA (United States)
Univ. of California, Riverside, CA (United States)
Univ. of Gdansk (Poland)

Abstract Many material device applications would benefit from thin diamond coatings, but current growth techniques, such as chemical vapor deposition (CVD) or atomic layer deposition require high substrate and gas‐phase temperatures that would destroy the device being coated. The development of freestanding, thin boron‐doped diamond nanosheets grown on tantalum foil substrates via microwave plasma‐assisted CVD is reported. These diamond sheets (measuring up to 4 × 5 mm in planar area, and 300–600 nm in thickness) are removed from the substrate using mechanical exfoliation and then transferred to other substrates, including Si/SiO ₂ and graphene. The electronic properties of the resulting diamond nanosheets and their dependence on the free‐standing growth, the mechanical exfoliation and transfer processes, and ultimately on their composition are characterized. To validate this, a prototypical diamond nanosheet–graphene field effect transistor‐like (DNGfet) device is developed and its electronic transport properties are studied as a function of temperature. The resulting DNGfet device exhibits thermally activated transport (thermionic conductance) above 50 K. Below 50 K a transition to variable range hopping is observed. These findings demonstrate the first step towards a low‐temperature diamond‐based transistor.

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Research Organization:: Univ. of Southern California, Los Angeles, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC); Polish National Science Centre (NCN)

Grant/Contract Number:: SC0014607; 2015/16/T/ST7/00469; 2016/21/B/ST7/01430; 2016/22/E/ST7/00102; 2014/14/M/ST5/00715; 347324; G5147; DE‐SC0014607

OSTI ID:: 1612242

Alternate ID(s):: OSTI ID: 1488352

Journal Information:: Advanced Functional Materials, Vol. 29, Issue 3; ISSN 1616-301X

Publisher:: WileyCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 19 works

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Title: Growth and Isolation of Large Area Boron-Doped Nanocrystalline Diamond Sheets: A Route toward Diamond-on-Graphene Heterojunction

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