Wafer-scale on-chip synthesis and field emission properties of vertically aligned boron nitride based nanofiber arrays

Long, Hu; Pham, Thang; Yan, Aiming; Guo, Zhen; Ishida, Hiroya; Shi, Wu; Turner, Sally; Gilbert, S. Matt; Zettl, Alex

doi:10.1063/1.5079655

Title: Wafer-scale on-chip synthesis and field emission properties of vertically aligned boron nitride based nanofiber arrays

Journal Article · Mon Mar 04 00:00:00 EST 2019 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.5079655· OSTI ID:1605231

^[1]; Pham, Thang ^[1]; Yan, Aiming ^[1]; Guo, Zhen ^[2]; Ishida, Hiroya ^[3]; Shi, Wu ^[1]; Turner, Sally ^[1]; Gilbert, S. Matt ^[1]; Zettl, Alex ^[4]

Univ. of California, Berkeley, CA (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Univ. of California, Berkeley, CA (United States)
Sekisui Chemical Co. LTD, Shimamoto, Mishima, Osaka (Japan)
Univ. of California, Berkeley, CA (United States). Kavli Energy NanoScience Inst.; Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)

One dimensional boron nitride (BN) nanomaterials with a high aspect ratio are of great interest due to their unique properties and potential applications. However, BN nanomaterials are generally difficult to synthesize. Here, we describe the creation of arrays of vertically aligned pure BN nanofibers and BN coated carbon nanofibers, fabricated on-chip via a straightforward template-assisted chemical conversion reaction. The template, a glassy carbon nanofiber array, is produced by plasma processing of conventional photoresists. The method is highly controllable, patternable, and scalable, and the final arrays can be fabricated over large areas with a controlled fiber length. We characterize the electron field emission properties of the BN-coated carbon nanofiber array and find a large field enhancement factor, low turn-on voltage, and good stability. The outstanding field emission performance results from the small tip size and high aspect ratio of the nanofiber as well as the high chemical stability and high thermal conductivity of the BN coating.

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Research Organization:: Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC)

Grant/Contract Number:: AC02-05CH11231

OSTI ID:: 1605231

Journal Information:: Applied Physics Letters, Vol. 114, Issue 9; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 2 works

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