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Title: Local atomic structure and lattice defect analysis in heavily Co-doped ZnS thin films using X-ray absorption fine structure spectroscopy

Journal Article · · Journal of Physics and Chemistry of Solids
 [1];  [1];  [2];  [1];  [3]
  1. CINVESTAV Unidad Mérida, Yucatán (Mexico)
  2. Stanford Univ., CA (United States)
  3. Univ. Marista de Mérida, Yucatán (Mexico)

Iin this work, X-ray absorption fine structure (XAFS) spectroscopy was used to address both the local atomic structure and the local electronic structure around Zn, Co, and S in Co-doped ZnS thin films. X-ray absorption near-edge spectroscopy (XANES) revealed changes in the strong pre-edge feature of the S K-edge spectra that depend on the Co concentration and are related to atomic bound-state transitions through hybridization between $3d$ transition metal and $sp$ host semiconductor electronic states. These changes reveal intrinsic effects, such as S vacancies and dopant effects. From the Co K-edge XANES spectra, substitution of Co2+ into ZnS is observed. The local atomic structure around the dopant, obtained by XAFS spectroscopy, indicates a reduction of the Co–S bond length. Optical analysis shows deep absorption centers or intermediate states in the bandgap, ascribed to $$d$$-$$d$$ transitions in the Co atoms that modify the electronic band structure and cause a decrease in the bandgap as a function of Co concentration. This work provides direct evidence of dopant effects in heavily Co-doped ZnS, including bond distances and Debye-Waller factors, providing key elements to generate a realistic atomic structural model, which is crucial to understand the observed electronic properties of this material.

Research Organization:
SLAC National Accelerator Lab., Menlo Park, CA (United States). Stanford Synchrotron Radiation Lightsource (SSRL)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES); Secretaría de Educación Pública-Consejo Nacional de Ciencia y Tecnología (SEP-CONACYT); LANNBIO, CINVESTAV, Mexico
Grant/Contract Number:
169108; 2008-108160; 123913; AC02-76SF00515
OSTI ID:
1604748
Alternate ID(s):
OSTI ID: 1703239
Journal Information:
Journal of Physics and Chemistry of Solids, Vol. 136, Issue C; ISSN 0022-3697
Publisher:
ElsevierCopyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 5 works
Citation information provided by
Web of Science

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