Defect-Induced Hedgehog Polarization States in Multiferroics

Li, Linze; Cheng, Xiaoxing; Jokisaari, Jacob R.; Gao, Peng; Britson, Jason; Adamo, Carolina; Heikes, Colin; Schlom, Darrell G.; Chen, Long-Qing; Pan, Xiaoqing

doi:10.1103/PhysRevLett.120.137602

Title: Defect-Induced Hedgehog Polarization States in Multiferroics

Journal Article · Tue Mar 27 00:00:00 EDT 2018 · Physical Review Letters

DOI:https://doi.org/10.1103/PhysRevLett.120.137602· OSTI ID:1600477

Li, Linze ^[1]; Cheng, Xiaoxing ^[2]; Jokisaari, Jacob R. ^[3]; Gao, Peng ^[3]; Britson, Jason ^[2]; Adamo, Carolina ^[4]; Heikes, Colin ^[4]; Schlom, Darrell G. ^[5]; Chen, Long-Qing ^[2]; Pan, Xiaoqing ^[6]

Univ. of California, Irvine, CA (United States); Univ. of Michigan, Ann Arbor, MI (United States)
Pennsylvania State Univ., University Park, PA (United States)
Univ. of Michigan, Ann Arbor, MI (United States)
Cornell Univ., Ithaca, NY (United States)
Cornell Univ., Ithaca, NY (United States); Kavli Inst. at Cornell for Nanoscale Science
Univ. of California, Irvine, CA (United States)

Continuous developments in nanotechnology require new approaches to materials synthesis that can produce novel functional structures. Here, we show that nanoscale defects, such as nonstoichiometric nanoregions (NSNRs), can act as nano-building blocks for creating complex electrical polarization structures in the prototypical multiferroic BiFeO₃. An array of charged NSNRs are produced in BiFeO₃ thin films by tuning the substrate temperature during film growth. Atomic-scale scanning transmission electron microscopy imaging reveals exotic polarization rotation patterns around these NSNRs. These polarization patterns resemble hedgehog or vortex topologies and can cause local changes in lattice symmetries leading to mixed-phase structures resembling the morphotropic phase boundary with high piezoelectricity. Phase-field simulations indicate that the observed polarization configurations are mainly induced by charged states at the NSNRs. Engineering defects thus may provide a new route for developing ferroelectric-or multiferroic-based nanodevices.

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Research Organization:: Pennsylvania State Univ., University Park, PA (United States); Univ. of California, Irvine, CA (United States); Univ. of California, Oakland, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division; National Science Foundation (NSF)

Grant/Contract Number:: FG02-07ER46417; SC0014430; AC02-05CH11231; ECCS-1542081; EEC-1160504; DMR0723032; OCI0821527; AC0205CH11231; FG0207ER46417

OSTI ID:: 1600477

Alternate ID(s):: OSTI ID: 1429959

Journal Information:: Physical Review Letters, Vol. 120, Issue 13; ISSN 0031-9007

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 52 works

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Control of Domain Structures in Multiferroic Thin Films through Defect Engineering Li, Linze; Jokisaari, Jacob R.; Zhang, Yi Advanced Materials, Vol. 30, Issue 38 https://doi.org/10.1002/adma.201802737	journal	August 2018
Rotational polarization nanotopologies in BaTiO ₃ /SrTiO ₃ superlattices Estandía, Saúl; Sánchez, Florencio; Chisholm, Matthew F. Nanoscale, Vol. 11, Issue 44 https://doi.org/10.1039/c9nr08050c	journal	January 2019
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