Steady-state photoluminescent excitation characterization of semiconductor carrier recombination
- Intel Corporation, Hillsboro, OR (United States); Purdue Univ., West Lafayette, IN (United States)
- Purdue Univ., West Lafayette, IN (United States)
We report that photoluminescence excitation spectroscopy is a contactless characterization technique that can provide valuable information about the surface and bulk recombination parameters of a semiconductor device, distinct from other sorts of photoluminescent measurements. For this technique, a temperature-tuned light emitting diode (LED) has several advantages over other light sources. The large radiation density offered by LEDs from near-infrared to ultraviolet region at a low cost enables efcient and fast photoluminescence measurements. A simple and inexpensive LED-based setup facilitates measurement of surface recombination velocity and bulk Shockley-Read-Hall lifetime, which are key parameters to assess device performance. Finally, under the right conditions, this technique can also provide a contactless way to measure the external quantum efciency of a solar cell
- Research Organization:
- Stanford Univ., CA (United States)
- Sponsoring Organization:
- USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office
- Grant/Contract Number:
- EE0004946; AC36-08GO28308
- OSTI ID:
- 1579853
- Journal Information:
- Review of Scientific Instruments, Vol. 87, Issue 1; ISSN 0034-6748
- Publisher:
- American Institute of Physics (AIP)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
Web of Science
Similar Records
Photovoltaic Material Characterization With Steady State and Transient Photoluminescence
Intensity-dependent minority-carrier lifetime in III-V semiconductors due to saturation of recombination centers