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Title: Steady-state photoluminescent excitation characterization of semiconductor carrier recombination

Journal Article · · Review of Scientific Instruments
DOI:https://doi.org/10.1063/1.4939047· OSTI ID:1579853

We report that photoluminescence excitation spectroscopy is a contactless characterization technique that can provide valuable information about the surface and bulk recombination parameters of a semiconductor device, distinct from other sorts of photoluminescent measurements. For this technique, a temperature-tuned light emitting diode (LED) has several advantages over other light sources. The large radiation density offered by LEDs from near-infrared to ultraviolet region at a low cost enables efcient and fast photoluminescence measurements. A simple and inexpensive LED-based setup facilitates measurement of surface recombination velocity and bulk Shockley-Read-Hall lifetime, which are key parameters to assess device performance. Finally, under the right conditions, this technique can also provide a contactless way to measure the external quantum efciency of a solar cell

Research Organization:
Stanford Univ., CA (United States)
Sponsoring Organization:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office
Grant/Contract Number:
EE0004946; AC36-08GO28308
OSTI ID:
1579853
Journal Information:
Review of Scientific Instruments, Vol. 87, Issue 1; ISSN 0034-6748
Publisher:
American Institute of Physics (AIP)Copyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 4 works
Citation information provided by
Web of Science

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  • Montgomery, Kyle H.; Berdebes, Dionisis; Bhosale, Jayprakash
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