skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Electrical and optical characterization of CdTe solar cells with CdS and CdSe buffers—A comparative study

Journal Article · · Journal of Vacuum Science and Technology B
DOI:https://doi.org/10.1116/1.5044219· OSTI ID:1579313
 [1];  [1];  [1];  [1];  [2];  [2];  [1];  [3]
  1. Texas State Univ., San Marcos, TX (United States)
  2. The Univ. of Toledo, Toledo, OH (United States)
  3. National Cheng Kung Univ., Tainan Taiwan

A study is reported comparing the electrical and optical properties of CdTe solar cells, prepared using CdS and CdSe buffer layers, to investigate defects in the bulk and interface, carrier transport, and recombination. Temperature dependent capacitance-voltage measurement and admittance spectroscopy were used to extract carrier concentration, resistivity, charge carrier mobility, and their temperature dependence. We identify the presence of two defect signatures corresponding to carrier freeze-out and the formation of a Schottky back-contact barrier. The back-contact barrier height (≈ 300 meV) extracted from the temperature dependent current density-voltage (JVT) experiment was confirmed by conventional admittance spectroscopy. The activation energies of mobility (resistivity) are 101.2 ± 2.5 meV (92.6 ± 2.3 meV) and 84.7 ± 2.7 meV (77.6 ± 4.5 meV) for CdS and CdSe buffer layers, respectively. Intensity dependent photoluminescence analysis demonstrates that the CdSe/CdTe device exhibits lower radiative efficiency than the CdS/CdTe device. This confirms the presence of higher defects in CdSe/CdTe device corroborated by temperature-dependent VOC analysis. Here, the comparative electrical and optical analysis provides insight to improving the performance of CdTe solar cell device by selenization.

Research Organization:
Texas State Univ., San Marcos, TX (United States)
Sponsoring Organization:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office
Grant/Contract Number:
EE0007541
OSTI ID:
1579313
Alternate ID(s):
OSTI ID: 1468674
Journal Information:
Journal of Vacuum Science and Technology B, Vol. 36, Issue 5; ISSN 2166-2746
Publisher:
American Vacuum Society/AIPCopyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 17 works
Citation information provided by
Web of Science

Cited By (2)

Radiative Efficiency and Charge‐Carrier Lifetimes and Diffusion Length in Polycrystalline CdSeTe Heterostructures journal December 2019
Radiative Efficiency and Charge‐Carrier Lifetimes and Diffusion Length in Polycrystalline CdSeTe Heterostructures journal January 2020

Similar Records

Effects of post-deposition CdCl2 annealing on electronic properties of CdTe solar cells
Journal Article · Mon Oct 19 00:00:00 EDT 2020 · Solar Energy · OSTI ID:1579313

Crosscutting Recombination Metrology for Expediting VOC Engineering
Technical Report · Wed Oct 16 00:00:00 EDT 2019 · OSTI ID:1579313

The Effects of Hydrogen Iodide Back Surface Treatment on CdTe Solar Cells
Journal Article · Tue Jan 08 00:00:00 EST 2019 · Solar RRL · OSTI ID:1579313

Related Subjects