Electron photoemission with tunable excitation and transport energetics
A photocathode for use in vacuum electronic devices has a bandgap gradient across the thickness (or depth) of the photocathode between the emitting surface and the opposing surface. This bandgap gradient compensates for depth-dependent variations in transport energetics. When the bandgap energy EBG(z) is increased for electrons with shorter path lengths to the emitting surface and decreased for electrons with longer path lengths to the emitting surface, such that the sum of EBG(z) and the scattering energy is substantially constant or similar for electrons photoexcited at all locations within the photocathode, the energies of the emitted electrons may be more similar (have less variability), and the emittance of the electron beam may be desirably decreased. The photocathode may be formed of a III-V semiconductor such as InGaN or an oxide semiconductor such as GaInO.
- Research Organization:
- Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC52-06NA25396
- Assignee:
- Triad National Security, LLC (Los Alamos, NM)
- Patent Number(s):
- 10,381,187
- Application Number:
- 15/675,607
- OSTI ID:
- 1568723
- Resource Relation:
- Patent File Date: 08/11/2017
- Country of Publication:
- United States
- Language:
- English
Variable sensitivity transmission mode negative electron affinity photocathode
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Fabrication of Group III-Nitride Photocathode Having Cs Activation Layer
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patent-application | August 2006 |
Process for producing layered member and layered member
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patent | November 2014 |
Method of Forming Group III-V Compound Photoemitters Having a High Quantum Efficiency and Long Wavelength Response
|
patent | June 1972 |
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