Hole blocking, electron transporting and window layer for optimized CuIn(1−x)Ga(x)Se2 solar cells
Patent
·
OSTI ID:1568534
Thin-film photovoltaic devices and methods of their use and manufacture are disclosed. More particularly, polycrystalline CuIn(1-x)GaxSe2 (CIGS) based thin-film photovoltaic devices having independently tunable sublayers are disclosed. Also provided are methods of producing an n-doped graphene.
- Research Organization:
- Brookhaven National Laboratory (BNL), Upton, NY (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC02-98CH10886; SC0012704
- Assignee:
- Brookhaven Science Associates, LLC (Upton, NY); The Research Foundation of State University of New York (Stony Brook, NY)
- Patent Number(s):
- 10,333,017
- Application Number:
- 15/127,996
- OSTI ID:
- 1568534
- Resource Relation:
- Patent File Date: 03/20/2015
- Country of Publication:
- United States
- Language:
- English
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