Silicon Photomultiplier for Medical Imaging -Analysis of SiPM characteristics-

Journal Article · Mon Jul 08 00:00:00 EDT 2019 · TBD

OSTI ID:1561553

Nagai, A. ^[1]; Dinu-Jaeger, N. ^[2]; Para, A. ^[3]

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1. Geneva U.
2. ARTEMIS, Nice
3. Fermilab

This paper proposes an automatic procedure, based on ROOT data Analysis Framework, for the analysis of Silicon Photomultipliers (SiPM) characteristics. In particular, it can be used to analyze experimental waveforms, from oscilloscope, containing SiPM pulses acquired at different temperatures and bias voltages. Important SiPMs characteristics such as: charge distribution, gain, breakdown voltage, pulse shape (rise time and recovery time) and overvoltage can been calculated. Developed procedure can be easily used to analyze any type of SiPM detectors.

• Research Organization: Fermi National Accelerator Lab. (FNAL), Batavia, IL (United States)
• Sponsoring Organization: USDOE Office of Science (SC), High Energy Physics (HEP)
• DOE Contract Number: AC02-07CH11359
• OSTI ID: 1561553
• Report Number(s): arXiv:1907.03926; FERMILAB-PUB-19-385-CD; oai:inspirehep.net:1743024
• Journal Information: TBD, Journal Name: TBD
• Country of Publication: United States
• Language: English

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