Negative differential resistance in GaN homojunction tunnel diodes and low voltage loss tunnel contacts
- Georgia Inst. of Technology, Atlanta, GA (United States)
The current-voltage characteristics and metastability in GaN p++/n++ homojunction tunnel diodes and n++/p++/i/n tunnel-contacted diodes grown via metal modulated epitaxy have been reported on. The room temperature negative differential resistance (NDR) beginning at ~1.35 V is discussed for GaN homojunction devices grown on sapphire. The NDR vanishes, and the conductivity increases as multiple I-V sweeps are performed, thus implying that charge trapping states with long trap lifetimes exist at defect sites, and these traps play a crucial role in the tunneling mechanism. Additionally, the use of extremely high n-type (ND ~ 4.6×1020 cm–3) and p-type (NA ~ 7.7×1020 cm–3) doping results in a near linear characteristic with minimal rectification at current densities less than 200 A/cm2 and soft rectification above this current density. Forward-bias tunneling and NDR are still present at 77 K. The highest silicon-doped n++/p++/i/n tunnel-contacted pin diode demonstrates a turn-on voltage of 3.12 V, only 0.14 V higher than that of the pin control diode, and an improved specific on-resistance of 3.24 ×10–4 Ω cm2, which is 13% lower than that of the control pin diode.
- Research Organization:
- Arizona State Univ., Tempe, AZ (United States)
- Sponsoring Organization:
- USDOE Advanced Research Projects Agency - Energy (ARPA-E); National Science Foundation (NSF)
- Grant/Contract Number:
- AR0000470
- OSTI ID:
- 1540218
- Alternate ID(s):
- OSTI ID: 1454896
- Journal Information:
- Applied Physics Letters, Vol. 112, Issue 25; ISSN 0003-6951
- Publisher:
- American Institute of Physics (AIP)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
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