Radiation defect dynamics in SiC with pre-existing defects

Bayu Aji, L. B.; Wallace, J. B.; Kucheyev, S. O.

doi:10.1063/1.5093640

Title: Radiation defect dynamics in SiC with pre-existing defects

Journal Article · Fri Jun 21 00:00:00 EDT 2019 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.5093640· OSTI ID:1529183

^[1]; Wallace, J. B. ^[1]; Kucheyev, S. O. ^[1]

Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)

The influence of pre-existing lattice disorder on radiation defect dynamics in SiC remains unexplored. Here, we use a pulsed ion beam method to study dynamic annealing in Ar-ion-bombarded 3C-SiC at 200°C with different levels of pre-existing lattice disorder. Results reveal a nonmonotonic dependence of the defect relaxation time constant on the level of pre-existing disorder, exhibiting a maximum of ~4 ms at a level of relative initial disorder of ~0.4, while crystals without pre-existing damage are characterized by a time constant of ~1.4 ms. These observations demonstrate that radiation defect dynamics in SiC can be controlled by defect engineering.

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Research Organization:: Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA)

Grant/Contract Number:: AC52-07NA27344

OSTI ID:: 1529183

Alternate ID(s):: OSTI ID: 1526776

Report Number(s):: LLNL-JRNL-766299; 955271

Journal Information:: Journal of Applied Physics, Vol. 125, Issue 23; ISSN 0021-8979

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 4 works

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References (23)

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