High-frequency, high-power performance of AlGaN-channel high-electron-mobility transistors: an RF simulation study [High-frequency high power performance of AlGaN channel HEMTs: an RF simulation study]
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
The emerging Al-rich AlGaN-channel AlxGa1–xN/AlyGa1–y N high-electron-mobility transistors (HEMTs) with 0.7 ≤ y < x ≤ 1.0 have the potential to greatly exceed the power handling capabilities of today's GaN HEMTs, possibly by five times. This projection is based on the expected 4× enhancement of the critical electric field, the 2× enhancement of sheet carrier density, and the parity of the electron saturation velocity for Al-rich AlGaN-channel HEMTs relative to GaN-channel HEMTs. In this paper, the expected increased RF power density in Al-rich AlGaN-channel HEMTs is calculated by theoretical analysis and computer simulations, based on existing data on long-channel AlGaN devices. It is shown that a saturated power density of 18 W mm–1, a power-added efficiency of 55% and an output third-order intercept point over 40 dB can be achieved for this technology. Furthermore, the method for large-signal RF performance estimation presented in this paper is generic and can be applied to other novel high-power device technologies at the early stages of development.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA)
- Grant/Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1515222
- Report Number(s):
- SAND-2018-13883J; 670727
- Journal Information:
- Japanese Journal of Applied Physics, Vol. 58, Issue SC; ISSN 0021-4922
- Publisher:
- Japan Society of Applied PhysicsCopyright Statement
- Country of Publication:
- United States
- Language:
- English
Web of Science
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