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Title: Localized atmospheric laser chemical vapor deposition

Patent ·
OSTI ID:1503530

An atmospheric, Laser-based Chemical Vapor Deposition (LCVD) technique provides highly localized deposition of material to mitigate damage sites on an optical component. The same laser beam can be used to deposit material as well as for in-situ annealing of the deposited material. The net result of the LCVD process is in-filling and planarization of a treated site, which produces optically more damage resistant surfaces. Several deposition and annealing steps can be interleaved during a single cycle for more precise control on amount of deposited material as well as for increasing the damage threshold for the deposited material.

Research Organization:
Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC52-07NA27344
Assignee:
Lawrence Livermore National Security, LLC (Livermore, CA)
Patent Number(s):
10,208,377
Application Number:
14/389,709
OSTI ID:
1503530
Resource Relation:
Patent File Date: 2013 Apr 19
Country of Publication:
United States
Language:
English

References (9)

Gas photonanograph for producing and optically analyzing nanometre scale patterns patent April 1995
Hydrogen Energy Systems patent-application July 2010
Reactor for laser-assisted chemical vapor deposition patent January 1991
Hybrid LCVD of micro-metallic lines for TFT-LCD circuit repair journal November 2006
Method and apparatus for field-emission high-pressure-discharge laser chemical vapor deposition of free-standing structures patent-application December 2006
Method and apparatus for performing pattern defect repair using Q-switched mode-locked pulse laser patent April 2005
Gas barrier film, substrate film, and organic electroluminescence device patent October 2010
Thin film forming apparatus using laser patent April 1997
Method for fabricating an optical waveguide on a planar glass substrate patent October 1983

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