Enhanced-Depletion-Width GaInNAs Solar Cells Grown by Molecular-Beam Epitaxy
GaInNAs, potentially useful in a 4-junction GaInP2/GaAs/GaInNAs/Ge solar cell, suffers from very low minority-carrier collection lengths. To date, the currents available from GaInNAs solar cells are not high enough to increase the efficiency of a 3-junction device by adding this fourth junction. Here, we grow p-i-n GaInNAs solar cells by molecular-beam epitaxy with wide, intrinsic base layers and internal quantum efficiencies near 1.0. If similar 1.0-eV GaInNAs junctions can be successfully integrated into the 3-junction structure, the resulting 4-junction cell would have a higher efficiency.
- Research Organization:
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
- Sponsoring Organization:
- US Department of Energy (US)
- DOE Contract Number:
- AC36-99-GO10337
- OSTI ID:
- 15016500
- Report Number(s):
- NREL/CP-520-37479; TRN: US200513%%525
- Resource Relation:
- Conference: Prepared for the 31st IEEE Photovoltaics Specialists Conference and Exhibition, Lake Buena Vista, FL (US), 01/03/2005--01/07/2005; Other Information: PBD: 1 Feb 2005
- Country of Publication:
- United States
- Language:
- English
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