Voltage-Controlled Bistable Thermal Conductivity in Suspended Ferroelectric Thin-Film Membranes
- Univ. of Virginia, Charlottesville, VA (United States); The Pennsylvania State Univ., University Park, PA (United States)
- The Pennsylvania State Univ., University Park, PA (United States); General Electric, Niskayuna, NY (United States)
- Univ. of Virginia, Charlottesville, VA (United States)
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Argonne National Lab. (ANL), Lemont, IL (United States)
- The Pennsylvania State Univ., University Park, PA (United States)
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Univ. of Virginia, Charlottesville, VA (United States)
Ferroelastic domain walls in ferroelectric materials possess two properties that are known to affect phonon transport: a change in crystallographic orientation and a lattice strain. Changing populations and spacing of nanoscale-spaced ferroelastic domain walls lead to the manipulation of phonon-scattering rates, enabling the control of thermal conduction at ambient temperatures. In the present work, lead zirconate titanate (PZT) thin-film membrane structures were fabricated to reduce mechanical clamping to the substrate and enable a subsequent increase in the ferroelastic domain wall mobility. Under application of an electric field, the thermal conductivity of PZT increases abruptly at similar to 100 kV/cm by similar to 13% owing to a reduction in the number of phonon-scattering domain walls in the thermal conduction path. The thermal conductivity modulation is rapid, repeatable, and discrete, resulting in a bistable state or a "digital" modulation scheme. The modulation of thermal conductivity due to changes in domain wall configuration is supported by polarization-field, mechanical stiffness, and in situ microdiffraction experiments. This work opens a path toward a new means to control phonons and phonon-mediated energy in a digital manner at room temperature using only an electric field.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Argonne National Lab. (ANL), Argonne, IL (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA); USDOE Office of Science (SC); National Science Foundation (NSF); Air Force Research Laboratory (AFRL), Air Force Office of Scientific Research (AFOSR)
- Grant/Contract Number:
- AC04-94AL85000; AC02-06CH11357
- OSTI ID:
- 1465382
- Alternate ID(s):
- OSTI ID: 1481749
- Report Number(s):
- SAND-2018-8415J; 666627
- Journal Information:
- ACS Applied Materials and Interfaces, Vol. 10, Issue 30; ISSN 1944-8244
- Publisher:
- American Chemical Society (ACS)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
Web of Science
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journal | November 2018 |
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