Mesoscopic Elastic Distortions in GaAs Quantum Dot Heterostructures

Pateras, Anastasios; Park, Joonkyu; Ahn, Youngjun; Tilka, Jack A.; Holt, Martin V.; Reichl, Christian; Wegscheider, Werner; Baart, Timothy A.; Dehollain, Juan Pablo; Mukhopadhyay, Uditendu; Vandersypen, Lieven M.  K.; Evans, Paul G.

doi:10.1021/acs.nanolett.7b04603

Title: Mesoscopic Elastic Distortions in GaAs Quantum Dot Heterostructures

Journal Article · Tue Apr 17 00:00:00 EDT 2018 · Nano Letters

DOI:https://doi.org/10.1021/acs.nanolett.7b04603· OSTI ID:1461309

Pateras, Anastasios ^[1]; Park, Joonkyu ^[1]; Ahn, Youngjun ^[1]; Tilka, Jack A. ^[1]; Holt, Martin V. ^[2]; Reichl, Christian ^[3]; Wegscheider, Werner ^[3]; Baart, Timothy A. ^[4]; Dehollain, Juan Pablo ^[4]; Mukhopadhyay, Uditendu ^[4]; Vandersypen, Lieven M. K. ^[4];

^[1]

Univ. of Wisconsin, Madison, WI (United States). Dept. of Materials Science & Engineering
Argonne National Lab. (ANL), Argonne, IL (United States). Center for Nanoscale Materials
Swiss Federal Inst. of Technology in Zurich (ETH Zurich) (Switzerland). Lab. for Solid State Physics
Delft Univ. of Technology (Netherlands). QuTech. Kavli Inst. of NanoScience

Quantum devices formed in high-electron-mobility semiconductor heterostructures provide a route through which quantum mechanical effects can be exploited on length scales accessible to lithography and integrated electronics. The electrostatic definition of quantum dots in semiconductor heterostructure devices intrinsically involves the lithographic fabrication of intricate patterns of metallic electrodes. The formation of metal/semiconductor interfaces, growth processes associated with polycrystalline metallic layers, and differential thermal expansion produce elastic distortion in the active areas of quantum devices. Understanding and controlling these distortions present a significant challenge in quantum device development. In this paper, we report synchrotron X-ray nanodiffraction measurements combined with dynamical X-ray diffraction modeling that reveal lattice tilts with a depth-averaged value up to 0.04° and strain on the order of 10^–4 in the two-dimensional electron gas (2DEG) in a GaAs/AlGaAs heterostructure. Elastic distortions in GaAs/AlGaAs heterostructures modify the potential energy landscape in the 2DEG due to the generation of a deformation potential and an electric field through the piezoelectric effect. Finally, the stress induced by metal electrodes directly impacts the ability to control the positions of the potential minima where quantum dots form and the coupling between neighboring quantum dots.

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Research Organization:: Argonne National Laboratory (ANL), Argonne, IL (United States); Univ. of Wisconsin, Madison, WI (United States); Delft Univ. of Technology (Netherlands)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES); National Science Foundation (NSF); Netherlands Organisation for Scientific Research (NWO)

Grant/Contract Number:: AC02-06CH11357; FG02-04ER46147; DGE-1256259; DMR-1121288; DMR-1720415

OSTI ID:: 1461309

Journal Information:: Nano Letters, Vol. 18, Issue 5; ISSN 1530-6984

Publisher:: American Chemical SocietyCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 16 works

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Spin–phonon interactions in silicon carbide addressed by Gaussian acoustics Whiteley, Samuel J.; Wolfowicz, Gary; Anderson, Christopher P. Nature Physics, Vol. 15, Issue 5 https://doi.org/10.1038/s41567-019-0420-0	journal	February 2019
Electrode-induced lattice distortions in GaAs multi-quantum-dot arrays Pateras, Anastasios; Carnis, Jérôme; Mukhopadhyay, Uditendu Journal of Materials Research, Vol. 34, Issue 08 https://doi.org/10.1557/jmr.2019.61	journal	March 2019

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77 NANOSCIENCE AND NANOTECHNOLOGY
36 MATERIALS SCIENCE
deformation potential
dynamical diffraction
GaAs quantum devices
piezoelectric effect
stress-induced distortions
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Title: Mesoscopic Elastic Distortions in GaAs Quantum Dot Heterostructures

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