Ambipolar ferromagnetism by electrostatic doping of a manganite

Zheng, L. M.; Wang, X. Renshaw; Lu, W. M.; Li, C. J.; Paudel, T. R.; Liu, Z. Q.; Huang, Z.; Zeng, S. W.; Han, Kun; Chen, Z. H.; Qiu, X. P.; Li, M. S.; Yang, Shize; Yang, B.; Chisholm, Matthew F.; Martin, L. W.; Pennycook, S. J.; Tsymbal, E. Y.; Coey, J. M. D.; Cao, W. W.

doi:10.1038/s41467-018-04233-5

Title: Ambipolar ferromagnetism by electrostatic doping of a manganite

Journal Article · Tue May 15 00:00:00 EDT 2018 · Nature Communications

DOI:https://doi.org/10.1038/s41467-018-04233-5· OSTI ID:1460348

Zheng, L. M. ^[1]; Wang, X. Renshaw ^[2]; Lu, W. M. ^[1]; Li, C. J. ^[3]; Paudel, T. R. ^[4];

^[5]; Huang, Z. ^[3]; Zeng, S. W. ^[3]; Han, Kun ^[3]; Chen, Z. H. ^[6];

^[7]; Li, M. S. ^[3];

^[8]; Yang, B. ^[1]; Chisholm, Matthew F. ^[8];

^[9]; Pennycook, S. J. ^[3]; Tsymbal, E. Y. ^[4];

^[10]; Cao, W. W. ^[11]

Harbin Inst. of Technology, Harbin (China)
Nanyang Technological Univ. (Singapore)
National Univ. of Singapore (Singapore)
Univ. of Nebraska, Lincoln, NE (United States)
Beihang Univ., Beijing (China)
Univ. of California, Berkeley, CA (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Harbin Inst. of Technology, Guangzhou (China)
Tongji Univ., Shanghai (China)
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Univ. of California, Berkeley, CA (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Trinity College, Dublin (Ireland); Beihang Univ., Beijing (China)
Harbin Inst. of Technology, Harbin (China); The Pennsylvania State Univ., University Park, PA (United States)

Complex-oxide materials exhibit physical properties that involve the interplay of charge and spin degrees of freedom. However, an ambipolar oxide that is able to exhibit both electron-doped and hole-doped ferromagnetism in the same material has proved elusive. Here we report ambipolar ferromagnetism in LaMnO₃, with electron-hole asymmetry of the ferromagnetic order. Starting from an undoped atomically thin LaMnO₃ film, we electrostatically dope the material with electrons or holes according to the polarity of a voltage applied across an ionic liquid gate. Magnetotransport characterization reveals that an increase of either electron-doping or hole-doping induced ferromagnetic order in this antiferromagnetic compound, and leads to an insulator-to-metal transition with colossal magnetoresistance showing electron-hole asymmetry. These findings are supported by density functional theory calculations, showing that strengthening of the inter-plane ferromagnetic exchange interaction is the origin of the ambipolar ferromagnetism. The result raises the prospect of exploiting ambipolar magnetic functionality in strongly correlated electron systems.

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Research Organization:: Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: AC02-05CH11231

OSTI ID:: 1460348

Journal Information:: Nature Communications, Vol. 9, Issue 1; Related Information: © 2018 The Author(s).; ISSN 2041-1723

Publisher:: Nature Publishing GroupCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 41 works

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