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Title: Pair creation energy and Fano factor of silicon measured at 185 K using 55 F e X-rays

Journal Article · · Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment
 [1];  [2];  [1]
  1. Brookhaven National Lab. (BNL), Upton, NY (United States)
  2. SLAC National Accelerator Lab., Menlo Park, CA (United States)

Here, the pair creation energy, ωω and the Fano factor of silicon were measured using a CCD sensor and X-rays from an 55Fe source. The measurements were performed at a sensor temperature of 185K. The pair creation energy was measured for X-rays in the 1.7–6.5 keV range. The measured pair creation energy is ω=(3.650 ± 0.009) eV at the MnKα line energy. The Fano factor at this energy is F = 0.128±0.001. The agreement with theory and previous measurements is satisfactory. The system gain was obtained from flat field exposures using the Poisson distribution properties. These results and the details of our measurement procedure are presented below.

Research Organization:
Brookhaven National Laboratory (BNL), Upton, NY (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Nuclear Physics (NP); National Science Foundation (NSF)
Grant/Contract Number:
SC0012704; AC02-76-SFO0515
OSTI ID:
1456908
Alternate ID(s):
OSTI ID: 1691729
Report Number(s):
BNL-205790-2018-JAAM; TRN: US1901257
Journal Information:
Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 901, Issue C; ISSN 0168-9002
Publisher:
ElsevierCopyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 1 work
Citation information provided by
Web of Science

Figures / Tables (9)


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