Pair creation energy and Fano factor of silicon measured at 185 K using X-rays
Journal Article
·
· Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment
- Brookhaven National Lab. (BNL), Upton, NY (United States)
- SLAC National Accelerator Lab., Menlo Park, CA (United States)
Here, the pair creation energy, ωω and the Fano factor of silicon were measured using a CCD sensor and X-rays from an 55Fe source. The measurements were performed at a sensor temperature of 185K. The pair creation energy was measured for X-rays in the 1.7–6.5 keV range. The measured pair creation energy is ω=(3.650 ± 0.009) eV at the MnKα line energy. The Fano factor at this energy is F = 0.128±0.001. The agreement with theory and previous measurements is satisfactory. The system gain was obtained from flat field exposures using the Poisson distribution properties. These results and the details of our measurement procedure are presented below.
- Research Organization:
- Brookhaven National Laboratory (BNL), Upton, NY (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), Nuclear Physics (NP); National Science Foundation (NSF)
- Grant/Contract Number:
- SC0012704; AC02-76-SFO0515
- OSTI ID:
- 1456908
- Alternate ID(s):
- OSTI ID: 1691729
- Report Number(s):
- BNL-205790-2018-JAAM; TRN: US1901257
- Journal Information:
- Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 901, Issue C; ISSN 0168-9002
- Publisher:
- ElsevierCopyright Statement
- Country of Publication:
- United States
- Language:
- English
Cited by: 1 work
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